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DOD - SMD 5962-88595

MICROCIRCUITS, DIGITAL, NMOS, 256 X 4 STATIC RAM (SRAM) MONOLITHIC SILICON

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Organization: DOD
Publication Date: 21 April 1989
Status: inactive
Page Count: 13
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device type shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 (See 6.4) 256 × 4 NMOS static RAM 35 ns

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline K F-6 (24-lead, .640" × .420" × .090"), flat package W D-7 (22-lead, 1.111" × .420" × .225"), dual-in-line package

Supply voltage range - - - - - - - - - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc DC voltage applied to outputs- - - - - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc DC input voltage range - - - - - - - - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc DC output current- - - - - - - - - - - - - - - - - - - - - - - - 20 mA Storage temperature range- - - - - - - - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) 1/- - - - - - - - - - - - - - - - 1.0 W 1/ Lead temperature (soldering, 10 seconds) - - - - - - - - - - - - +260°C Thermal resistance, junction-to-case (θJC): Cases K and W- - - - - - - - - - - - - - - - - - - - - - - - - See MIL-M-38510, appendix C Junction temperature (TJ)- - - - - - - - - - - - - - - - - - - - +175°C

Supply voltage range (VCC) - - - - - - - - - - - - - - - - - - - 4.5 V dc to 5.5 V dc Case operating temperature range (TC)- - - - - - - - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

September 12, 2017
MICROCIRCUITS, DIGITAL, NMOS, 256 X 4 STATIC RAM (SRAM) MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
August 30, 2010
MICROCIRCUITS, DIGITAL, NMOS, 256 X 4 STATIC RAM (SRAM) MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD 5962-88595
April 21, 1989
MICROCIRCUITS, DIGITAL, NMOS, 256 X 4 STATIC RAM (SRAM) MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
May 6, 1988
MICROCIRCUITS, DIGITAL, NMOS, 256 X 4 STATIC RAM (SRAM) MONOLITHIC SILICON
A description is not available for this item.

References

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