DLA - MIL-PRF-19500/666
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON TYPE 2N7454U1, 2N7455U1 JANSD, R
inactive
| Organization: | DLA |
| Publication Date: | 3 August 1999 |
| Status: | inactive |
| Page Count: | 20 |
scope:
This specification covers the performance requirements for a P-Channel, enhancement-mode, MOSFET, radiation hardened (Total Dose and Single Event characterization - see figure 4), power transistor. One level of product assurance is provided for each device type as specified in MIL-PRF-19500.
Document History
December 9, 2004
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON TYPE 2N7454U1, 2N7455U1 JANSD, R
A description is not available for this item.
MIL-PRF-19500/666
August 3, 1999
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON TYPE 2N7454U1, 2N7455U1 JANSD, R
This specification covers the performance requirements for a P-Channel, enhancement-mode, MOSFET, radiation hardened (Total Dose and Single Event characterization - see figure 4), power transistor....