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DLA - SMD-5962-86837 REV B

MICROCIRCUIT, DIGITAL, BIPOLAR ADVANCED LOW POWER, SCHOTTKY TTL, NAND GATES, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 6 July 1992
Status: inactive
Page Count: 11
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device type shall identify the circuit function as follows:

Device type Generic number Circuit function 01 54ALS30 Single, 8-input positive NAND gate

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline D F-2 (14-lead, .390" × .260" × .085"), flat package 2 C-2 ( 20-terminal, .358" × .358" × .100" ), square chip carrier package

Supply voltage range - - - - - - - - - - - - - - - - −0.5 V dc minimum to +7.0 V dc maximum Input voltage range- - - - - - - - - - - - - - - - - −1.5 V dc at −18mA to +7.0 V dc Storage temperature- - - - - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) per device 1/ 4.95 mW Lead temperature (soldering, 10 seconds) - - - - - - +300°C Thermal resistance, junction-to-case (θJC):- - - - - See MIL-M-38510, appendix C Junction temperature (TJ) - - - - - - - - - - - - - +175°C

Supply voltage range (VCC) - - - - - - - - - - - - - - - +4.5 V dc minimum to +5.5 V dc maximum Minimum high level input voltage (VIH) - - - - - - - - - - 2.0 V dc Maximum low level input voltage (VIL): TC=+125°C - - - - - - - - - - - - - - - - - - - - - - - 0.7 V dc TC= −55°C - - - - - - - - - - - - - - - - - - - - - - - 0.8 V dc TC= +25°C - - - - - - - - - - - - - - - - - - - - - - - 0.8 V dc Case operating temperature range (TC) - - - - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

September 5, 2023
MICROCIRCUIT, DIGITAL, BIPOLAR ADVANCED LOW POWER, SCHOTTKY TTL, NAND GATES, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
June 1, 2018
MICROCIRCUIT, DIGITAL, BIPOLAR ADVANCED LOW POWER, SCHOTTKY TTL, NAND GATES, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
December 10, 2012
MICROCIRCUIT, DIGITAL, BIPOLAR ADVANCED LOW POWER, SCHOTTKY TTL, NAND GATES, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
January 18, 2006
MICROCIRCUIT, DIGITAL, BIPOLAR ADVANCED LOW POWER, SCHOTTKY TTL, NAND GATES, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.  
SMD-5962-86837 REV B
July 6, 1992
MICROCIRCUIT, DIGITAL, BIPOLAR ADVANCED LOW POWER, SCHOTTKY TTL, NAND GATES, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
April 8, 1988
MICROCIRCUIT, DIGITAL, BIPOLAR ADVANCED LOW POWER, SCHOTTKY TTL, NAND GATES, MONOLITHIC SILICON
A description is not available for this item.
August 24, 1987
MICROCIRCUIT, DIGITAL, BIPOLAR ADVANCED LOW POWER, SCHOTTKY TTL, NAND GATES, MONOLITHIC SILICON
A description is not available for this item.

References

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