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DLA - SMD-5962-86805 REV C

MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K X 16 UV EPROM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 5 September 1992
Status: inactive
Page Count: 19
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

Device type Generic number 1 Circuit function Access time 01 64K × 16-bit UVEPROM 300 ns 02 64K × 16-bit UVEPROM 250 ns 03 64K × 16-bit UVEPROM 200 ns 04 64K × 16-bit UVEPROM 170 ns 05 64K × 16-bit UVEPROM 150 ns 06 64K × 16-bit UVEPROM 120 ns 07 64K × 16-bit UVEPROM 090 ns 08 64K × 16-bit UVEPROM 070 ns

The case outline(s) shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline Q D-5 (40-lead, 2.096" × .620" × .225"), dual-in-line package 2/ X C-5 (44-terminal, .662" × .662" × .120"), square chip carrier package 2/

Storage temperature range - - - - - - - - - - - - - −65°C to +150°C All Input or output voltage with respect to ground- −0.6 V dc to V CC +0.5 V dc Voltage on pin Ag with respect to ground- - - - - - −0.6 V dc to +13.5 V dc Power dissipation (PD) 3/ - - - - - - - - - - - - - 330 mW Lead temperature (soldering, 10 seconds) - - - - - +300°C Thermal resistance, junction-to-case (θJC) - - - - See MIL-M-38510, appendix C Junction temperature (TJ) 4/ - - - - - - - - - - - +150°C Data retention - - - - - - - - - - - - - - - - - - 10 years, minimum Endurance - - - - - - - - - - - - - - - - - - - - - 50 cycles byte, minimum

Case operating temperature range (TC) - - - - - - - −55°C to +125°C Supply voltage range (VCC) - - - - - - - - - - - - +4.5 V dc to +5.5 V dc

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

January 20, 2017
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K X 16 UV EPROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
December 19, 2014
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K X 16 UV EPROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
May 31, 2006
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K X 16 UV EPROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
July 24, 2000
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K X 16 UV EPROM, MONOLITHIC SILICON
A description is not available for this item.
July 5, 1994
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K X 16 UV EPROM, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-86805 REV C
September 5, 1992
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K X 16 UV EPROM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
May 15, 1992
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K X 16 UV EPROM, MONOLITHIC SILICON
A description is not available for this item.
March 27, 1991
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K X 16 UV EPROM, MONOLITHIC SILICON
A description is not available for this item.
May 26, 1989
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 64K X 16 UV EPROM, MONOLITHIC SILICON
A description is not available for this item.
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