DLA - SMD-5962-86831
MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, QUAD 2-INPUT NAND GATE, MONOLITHIC SILICON
| Organization: | DLA |
| Publication Date: | 26 February 1987 |
| Status: | inactive |
| Page Count: | 9 |
scope:
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".
The complete part number shall be as shown in the following example:
The device type shall identify the circuit function as follows:
Device type Generic number Circuit function 01 54HCT00 Quad 2-input nand gate with TTL compatible inputs
The case outline shall be as designated in appendix C of MIL-M-38510, and as follows:
Outline letter Case outline C D-1 (14-lead, ¼" × ¾"), dual-in-line package
Supply voltage −0.5 V dc to +7.0 V dc DC input voltage −0.5 V dc to VCC +0.5 V dc DC output voltage −0.5 V dc to VCC +0.5 V dc Clamp diode current ±20 mA DC output current (per pin) ±25 mA DC VCC or GND current (per pin) ±50 mA Storage temperature range −65°C to +150°C Maximum power dissipation (PD) 500 mW 2/ Lead temperature (soldering 10 seconds) 260°C Thermal resistance, junction-to-case (θJC) see MIL-M-38510 appendix C Junction temperature (TJ) +175°C
Supply voltage (VCC) 4.5 V dc to 5.5 V dc Input rise or fall time: (VCC = 4.5V) 0 to 500 ns Case operating temperature (TC) −55°C to +125°C
intended Use:
Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More
Document History
