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DLA - SMD-5962-89755 REV A

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 4 March 1992
Status: inactive
Page Count: 14
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function tPD 01 C22V10L 22-input 10-output 25 ns AND-OR-logic array 02 C22V10L 22-input 10-output 30 ns AND-OR-logic array 03 C22V10L 22-input 10-output 40 ns AND-OR-logic array 04 C22V10L 22-input 10-output 20 ns AND-OR-logic array

The case outline(s) shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline K F-6 (24-lead, .640" × .420" × .090"), flat package L D-9 (24-lead, 1.280" × .310" × .200"), dual-in-line package 3 C-4 (28-terminal .460" × .460" × .100"), square chip carrier package

Supply voltage range - - - - - - - - - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc Input voltage range - - - - - - - - - - - - - - - - - - - - - - −2.0 V dc to +7.0 V dc 2/ Output voltage applied - - - - - - - - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc 2/ Output sink current - - - - - - - - - - - - - - - - - - - - - - 16 mA Thermal resistance, junction-to-case (θJC) - - - - - - - - - - - See MIL-M-38510, appendix C Maximum power dissipation (PD) 3/ - - - - - - - - - - - - - - - 1.2 W Maximum junction temperature - - - - - - - - - - - - - - - - - - +175°C Lead temperature (soldering, 10 seconds maximum) - - - - - - - - +300°C

Supply voltage range (VCC) - - - - - - - - - - - - - - - - - - - 4.5 V dc to 5.5 V dc High level input voltage (VIH) - - - - - - - - - - - - - - - - - 2.0 V dc minimum Low level input voltage (VIL) - - - - - - - - - - - - - - - - - 0.8 V dc maximum Case operating temperature range (TC) - - - - - - - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

May 11, 2021
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
December 15, 2015
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
April 2, 2007
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
November 8, 2001
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
A description is not available for this item.
March 13, 1996
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-89755 REV A
March 4, 1992
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
August 23, 1989
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON
A description is not available for this item.
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