NPFC - MIL-PRF-19500/658
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON TYPE 2N7438, AND 2N7439 JANSD AND JANSR
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| Organization: | NPFC |
| Publication Date: | 28 May 1998 |
| Status: | active |
| Page Count: | 20 |
scope:
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (Total Dose and Single Event characterization, see figure 4), power transistor intended for use in high density power switching applications. One level of product assurance is provided for each device type as specified in MIL-PRF-19500.
Document History
August 18, 2021
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON TYPE 2N7438 and 2N7439 JANSD AND JANSR
A description is not available for this item.
March 16, 2021
Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, P-Channel Silicon Type 2N7438, and 2N7439 JANSD and JANSR
A description is not available for this item.
May 24, 2016
Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, P-Channel Silicon Type 2N7438, and 2N7439 JANSD and JANSR
A description is not available for this item.
July 15, 2011
Semiconductor Device, Field Effect Radiation Hardened (Total Dose and Single Event Effects) Transistor, P-Channel Silicon Type 2N7438, and 2N7439 JANSD and JANSR
A description is not available for this item.
March 13, 2003
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON TYPE 2N7438, AND 2N7439 JANSD AND JANSR
A description is not available for this item.
MIL-PRF-19500/658
May 28, 1998
SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED (TOTAL DOSE AND SINGLE EVENT EFFECTS) TRANSISTOR, P-CHANNEL SILICON TYPE 2N7438, AND 2N7439 JANSD AND JANSR
This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, radiation hardened (Total Dose and Single Event characterization, see figure 4), power transistor...