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ASTM F996

STANDARD TEST METHOD FOR SEPARATING A TOTAL-DOSE- INDUCED MOSFET THRESHOLD VOLTAGE SHIFT INTO COMPONENTS DUE TO OXIDE TRAPPED HOLES AND INTERFACE STATES USING THE SUBTHRESHOLD TECHNIQUE

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Organization: ASTM
Publication Date: 22 February 1991
Status: inactive
Page Count: 6
ICS Code (Transistors): 31.080.30

Document History

January 1, 2011
Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current–Voltage Characteristics
This test method covers the use of the subthreshold charge separation technique for analysis of ionizing radiation degradation of a gate dielectric in a metal-oxidesemiconductor- field-effect...
January 1, 2011
Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current–Voltage Characteristics
This test method covers the use of the subthreshold charge separation technique for analysis of ionizing radiation degradation of a gate dielectric in a metal-oxide-semiconducter-field-effect...
May 1, 2010
Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift Into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current–Voltage Characteristics
This test method covers the use of the subthreshold charge separation technique for analysis of ionizing radiation degradation of a gate dielectric in a metal-oxide-semiconducter-field-effect...
May 10, 1998
Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics
1. Scope 1.1 This test method covers the use of the subthreshold charge separation technique for analysis of ionizing radiation degradation of a gate dielectric in a...
May 10, 1998
Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics
This test method covers the use of the subthreshold charge separation technique for analysis of ionizing radiation degradation of a gate dielectric in a metal-oxide-semiconducter-field-effect...
January 1, 1992
Standard Test Method for Separating an Ionizing Radiation-Induced MOSFET Threshold Voltage Shift into Components Due to Oxide Trapped Holes and Interface States Using the Subthreshold Current-Voltage Characteristics
A description is not available for this item.
ASTM F996
February 22, 1991
STANDARD TEST METHOD FOR SEPARATING A TOTAL-DOSE- INDUCED MOSFET THRESHOLD VOLTAGE SHIFT INTO COMPONENTS DUE TO OXIDE TRAPPED HOLES AND INTERFACE STATES USING THE SUBTHRESHOLD TECHNIQUE
A description is not available for this item.
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