DLA - SMD-5962-96845 REV C
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 4K X 8/9 RADIATION-HARDENED DUAL-PORT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 24 February 2006 |
| Status: | inactive |
| Page Count: | 41 |
scope:
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
intended Use:
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Document History
October 25, 2023
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 4K X 8/9 RADIATION-HARDENED DUAL-PORT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
A description is not available for this item.
August 5, 2016
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 4K X 8/9 RADIATION-HARDENED DUAL-PORT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
April 8, 2008
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 4K X 8/9 RADIATION-HARDENED DUAL-PORT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
SMD-5962-96845 REV C
February 24, 2006
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 4K X 8/9 RADIATION-HARDENED DUAL-PORT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
February 27, 2001
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 4K X 8/9 RADIATION-HARDENED DUAL-PORT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Microcircuits covered by...
October 13, 2000
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 4K X 8/9 RADIATION-HARDENED DUAL-PORT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Microcircuits covered by...
July 30, 1996
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 4K X 8/9 RADIATION-HARDENED DUAL-PORT STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
A description is not available for this item.