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ASTM F1725

Standard Guide for Analysis of Crystallographic Perfection of Silicon Ingots

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Organization: ASTM
Publication Date: 10 June 1997
Status: inactive
Page Count: 3
ICS Code (Semiconducting materials): 29.045
scope:

1. Scope

1.1 This practice covers the analysis of the crystallographic perfection in silicon ingots. The steps described are sample preparation, etching solution selection and use, defect identification, and defect counting.

1.2 This practice is suitable for use if evaluating silicon grown in either [111] or [100] direction and doped either p or n type with resistivity greater than 0.005 Ωcm.

1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Document History

December 10, 2002
Standard Guide for Analysis of Crystallographic Perfection of Silicon Ingots
This practice covers the analysis of the crystallographic perfection in silicon ingots. The steps described are sample preparation, etching solution selection and use, defect identification, and...
ASTM F1725
June 10, 1997
Standard Guide for Analysis of Crystallographic Perfection of Silicon Ingots
1. Scope 1.1 This practice covers the analysis of the crystallographic perfection in silicon ingots. The steps described are sample preparation, etching solution selection and use, defect...
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