UNLIMITED FREE
ACCESS
TO THE WORLD'S BEST IDEAS

SUBMIT
Already a GlobalSpec user? Log in.

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

Customize Your GlobalSpec Experience

Finish!
Privacy Policy

This is embarrasing...

An error occurred while processing the form. Please try again in a few minutes.

DLA - SMD-5962-89855 REV A

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ONE TIME PROGRAMMABLE, ASYNCHRONOUS REGISTERED PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 9 June 1992
Status: inactive
Page Count: 29
scope:

This drawing forms a part of a one part - one part number documentation system (see 6.6). Two product assurance classes, military high reliability (device classes B, Q, or M) and space application (device classes S or V) and a choice of case outlines and lead finishes are available and are reflected in the complete part number. Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices". When available, a choice of radiation hardness assurance (RHA) levels are reflected in the complete part number.

The PIN shall be as shown in the following example:

Device classes M, B, or S RHA marked devices shall meet the MIL-M-38510 specified RHA levels and shall be marked with the appropriate RHA designator. Device classes Q or V devices shall meet or exceed the electrical performance characteristics specified in table I herein after exposure to the specified irradiation levels specified in the absolute maximum ratings herein and the RHA marked device shall be marked in accordance with MIL-I-38535. A dash (-) indicates a non-RHA device.

The device types shall identify the circuit function as follows:

Device type Generic number Circuit function 01 CY7C331-40 Asynchronous Registered PLD 40 ns 02 CY7C331-30 Asynchronous Registered PLD 30 ns 03 CY7C331-25 Asynchronous Registered PLD 25 ns

The device class designator shall be a single letter identifying the product assurance level (see 6.7 herein) as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883 B or S Certification and qualification to MIL-M-38510 Q or V Certification and qualification to MIL-I-38535

For device classes M, B, or S case outlines shall meet the requirements in appendix C of MIL-M-38510 and as listed below. For device classes Q or V, case outlines shall meet the requirements of MIL-I-38534, appendix C of MIL-M-38510, and as listed below.

Outline letter Case outline X See figure 1, (28-lead, 1.485" × .310" × .200"), dual-in-line package Y F-11 (28-lead, .740" × .380" × .090"), flat package Z See figure 2, (28-lead, .458" × .458" × .180"), J-leaded chip carrier 3 C-4 (28-terminal, .460" × .460" × .100"), square chip carrier package

The lead finish shall be as specified in MIL-M-38510 for classes M, B, or S or MIL-I-38535 for classes Q or V. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, or C are considered acceptable and interchangeable without preference.

Supply voltage to ground potential - - - - - - - −0.5 V dc to +7.0 V dc DC voltage applied to outputs in High Z state - −0.5 V dc to +7.0 V dc DC input voltage - - - - - - - - - - - - - - - - −3.0 V dc to +7.0 V dc Maximum power dissipation 2/ - - - - - - - - - - 1.2 W Lead temperature (soldering, 10 seconds) - - - - +260°C Thermal resistance, junction-to-case (θJC): Case outlines Y and 3 - - - - - - - - - - - - See Mil-M-38510, appendix C Case outline X - - - - - - - - - - - - - - - 26°C/W 3/ Case outline Z - - - - - - - - - - - - - - - 20°C/W 3/ Junction temperature (Tj) - - - - - - - - - - - +175°C Storage temperature range - - - - - - - - - - - −65°C to +150°C Temperature under bias - - - - - - - - - - - - - −55°C to +125°C

Supply voltage (VCC) - - - - - - - - - - - - - - +4.5 V dc to +5.5 V dc Ground voltage (GND) - - - - - - - - - - - - - - 0 V dc Input high voltage (VIH) - - - - - - - - - - - - 2.2 V dc minimum Input low voltage (VIL) - - - - - - - - - - - - 0.8 V dc maximum Case operating temperature range (TC) - - - - - −55°C to +125°C

Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012) - - - - - - - 4/ percent

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

March 6, 2018
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ONE TIME PROGRAMMABLE, ASYNCHRONOUS REGISTERED PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
October 31, 2011
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ONE TIME PROGRAMMABLE, ASYNCHRONOUS REGISTERED PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
SMD-5962-89855 REV A
June 9, 1992
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ONE TIME PROGRAMMABLE, ASYNCHRONOUS REGISTERED PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6). Two product assurance classes, military high reliability (device classes B, Q, or M) and space application...
May 9, 1990
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ONE TIME PROGRAMMABLE, ASYNCHRONOUS REGISTERED PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
A description is not available for this item.
Advertisement