DLA - MIL-S-19500/369B
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPE: 2N3441, JANTX
| Organization: | DLA |
| Publication Date: | 21 October 1991 |
| Status: | inactive |
| Page Count: | 17 |
scope:
This specification covers the detail requirements for NPN, silicon, power transistor. One level of product assurance are provided for each device type as specified in MIL-S-19500.
See figure 1 (T0-66).
RΘJC = 7°C/W; RΘJA = 58.5°C/W.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Defense Electronics Supply Center, ATTN: DESC-ECT, 1507 Wilmington Pike, Dayton, OH 45444-5280, by using the Standardization Document Proposal (DD Form 1426) appearing at the end of this document or by letter.
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