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NPFC - MIL-M-38510/332

MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, OCTAL BUFFERS, MONOLITHIC SILICON

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Organization: NPFC
Publication Date: 30 October 1987
Status: inactive
Page Count: 36
scope:

This specification covers the detail requirements for monolithic silicon, advanced Schottky TTL, Octal buffer (3-state) microcircuits. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the part number.

The part number shall be in accordance with MIL-M-38510.

The device types shall be as follows:

Device type Circuit 01 Octal buffer with active low enabled 3-state inverted outputs 02 Octal buffer with active low and active high enabled 3-state noninverted outputs 03 Octal buffer with active low enabled 3-state noninverted outputs 04 Octal buffer with active low enabled 3-state inverted outputs (inputs and outputs opposite side of package)

The device class shall be the product assurance level as defined in MIL-M-38510.

The case outlines shall be designated as follows:

Outline letter Case outline (see MIL-M-38510, appendix C) R D-8 (20-lead, ¼" × 1 1/16"), dual-in-line package S F-9 (20-lead, ¼" × ½"), flat package X C-2A (20-terminal, .350" × .350") square chip carrier package 2 C-2 (20-terminal, .350" × .350") square chip carrier package

Supply voltage range- - - - - - - - - - - - - - - - - −0.5 V to +7.0 V Input voltage range - - - - - - - - - - - - - - - - - −1.2 V at −18mA, to +7.0 V Storage temperature range - - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) 1/: Device types 01 and 04- - - - - - - - - - - - - - - 412 mW Device types 02 and 03- - - - - - - - - - - - - - - 495 mW Lead temperature (soldering, 10 seconds)- - - - - - - +300°C Thermal resistance, junction-to-case (θJC): Cases R, S, X, and 2- - - - - - - - - - - - - - - - (See MIL-M-38510, appendix C) Junction temperature (TJ) 2/- - - - - - - - - - - - - +175°c

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center (RBE-2), Griffiss AFB, NY 13441, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

Supply voltage (VCC) - - - - - - - - - - - - - - - - - 4.5 V minimum to 5.5 V maximum Minimum high level input voltage (VIH) - - - - - - - - 2.0 V Maximum low level input voltage (VIL) - - - - - - - - 0.8 V Normalized fanout (each output): 3/ At low logic level - - - - - - - - - - - - - - - - - 33 maximum At high logic level- - - - - - - - - - - - - - - - - 50 maximum Case operating temperature range (TC)- - - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this specification are intended for use for Government microcircuit applications (original equipment) and logistic purposes.

Document History

September 20, 2019
Microcircuits, Digital, Bipolar Advanced Schottky TTL, Octal Buffers, Monolithic Silicon
A description is not available for this item.
November 17, 2014
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, OCTAL BUFFERS, MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, Advanced Schottky TTL, positive octal buffer (3-state) microcircuits. Two product assurance classes and a choice of case...
August 23, 2013
Microcircuits, Digital, Bipolar Advanced Schottky TTL, Octal Buffers, Monolithic Silicon
A description is not available for this item.
November 13, 2008
Microcircuits, Digital, Bipolar Advanced Schottky TTL, Octal Buffers, Monolithic Silicon
This specification covers the detail requirements for monolithic silicon, Advanced Schottky TTL, positive octal buffer (3-state) microcircuits. Two product assurance classes and a choice of case...
November 25, 2003
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, OCTAL BUFFERS, MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, Advanced Schottky TTL, positive octal buffer (3-state) microcircuits. Two product assurance classes and a choice of case...
July 3, 2002
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, OCTAL BUFFERS, MONOLITHIC SILICON
A description is not available for this item.
April 18, 1997
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, OCTAL BUFFERS, MONOLITHIC SILICON
A description is not available for this item.
October 15, 1992
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, OCTAL BUFFERS, MONOLITHIC SILICON
A description is not available for this item.
MIL-M-38510/332
October 30, 1987
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, OCTAL BUFFERS, MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, advanced Schottky TTL, Octal buffer (3-state) microcircuits. Two product assurance classes and a choice of case outlines and...
July 14, 1987
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, OCTAL BUFFERS, MONOLITHIC SILICON
A description is not available for this item.
December 16, 1985
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, OCTAL BUFFERS, MONOLITHIC SILICON
A description is not available for this item.
June 26, 1985
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, OCTAL BUFFERS, MONOLITHIC SILICON
A description is not available for this item.
August 20, 1984
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, OCTAL BUFFERS, MONOLITHIC SILICON
A description is not available for this item.
December 7, 1983
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, OCTAL BUFFERS, MONOLITHIC SILICON
A description is not available for this item.
August 9, 1983
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, OCTAL BUFFERS, MONOLITHIC SILICON
A description is not available for this item.
May 27, 1982
MICROCIRCUITS, DIGITAL, BIPOLAR ADVANCED SCHOTTKY TTL, OCTAL BUFFERS, MONOLITHIC SILICON
A description is not available for this item.
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