DLA - SMD-5962-86705 REV D

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 4K X 4 STATIC RAM, MONOLITHIC SILICON

inactive

Organization:	DLA
Publication Date:	28 February 1992
Status:	inactive
Page Count:	23

scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01,11 (See 6.4) 4096 × 4 CMOS static RAM 25 ns 02 (See 6.4) 4096 × 4 CMOS static RAM 25 ns 03,12 (See 6.4) 4096 × 4 CMOS static RAM 35 ns 04 (See 6.4) 4096 × 4 CMOS static RAM 35 ns 05,13 (See 6.4) 4096 × 4 CMOS static RAM 45 ns 06 (See 6.4) 4096 × 4 CMOS static RAM 45 ns 07,14 (See 6.4) 4096 × 4 CMOS static RAM 55 ns 08 (See 6.4) 4096 × 4 CMOS static RAM 55 ns 09,15 (See 6.4) 4096 × 4 CMOS static RAM 70 ns 10 (See 6.4) 4096 × 4 CMOS static RAM 70 ns

The case outline shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline R D-8 (20-lead, ¼" × 1-1/16"), dual-in-line package X C-13 (20 terminal, 0.29" × 0.425") chip carrier package Y See figure 1 (20 lead, 0.39" × 0.49") flat package Z F-9A (20 lead, .300" × .540") flat package

Supply voltage range - - - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc Input voltage range- - - - - - - - - - - - - - - - - −0.3 V dc to V_CC + .5 V dc Storage temperature range- - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (P_D) - - - - - - - - - - - 1.0 W Lead temperature (soldering, 10 seconds) - - - - - - +300°C Thermal resistance, junction-to-case (θ_JC): Cases R, X, and Z- - - - - - - - - - - - - - - - - See MIL-M-38510, appendix C Case Y - - - - - - - - - - - - - - - - - - - - - - +3.8°C/W Junction temperature (T_J)- - - - - - - - - - - - - - +175°C DC output current- - - - - - - - - - - - - - - - - - 25 mA

Supply voltage (V_CC) - - - - - - - - - - - - - - - - 4.5 V dc minimum to 5.5 V dc maximum Minimum high-level input voltage (V_IH) - - - - - - - 2.4 V dc Maximum low-level input voltage (V_IL)- - - - - - - - 0.8 V dc Case operating temperature range (T_C)- - - - - - - - −55°C to +125°C V_CC for data retention (V_DR) - - - - - - - - - - - - 2.2 V dc minimum 1/

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

SMD-5962-86705 REV J

October 14, 2021

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 4K x 4 STATIC RAM, MONOLITHIC SILICON

Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.

SMD 5962-86705

July 5, 2017

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 4K x 4 STATIC RAM, MONOLITHIC SILICON

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

SMD 5962-86705

March 9, 2010

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 4K x 4 STATIC RAM, MONOLITHIC SILICON

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

SMD-5962-86705 REV F

January 30, 2006