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DLA - DESC-DWG-81036 REV J

MICROCIRCUITS, MEMORY, PROGRAMMABLE LOGIC, MONOLITHIC SILICON

inactive, Most Current
Organization: DLA
Publication Date: 4 December 1989
Status: inactive
Page Count: 24
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number Circuit function 01, 07, 11 PAL16L8, L8A, L8A-2 16-input 8-output AND-OR invert gate array 02, 08, 12 PAL16R8, R8A, R8A-2 16-input 8-output registered AND-OR gate array 03, 09, 13 PAL16R6, R6A, R6A-2 16-input 6-output registered AND-OR gate array 04, 10, 14 PAL16R4, R4A, R4A-2 16-input 4-output registered AND-OR gate array 05 PAL16X4 16-input 4-output registered AND-OR exclusive OR gate array 06 PAL16A4 16-input 4-output registered and-carry-or exclusive OR gate array

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline R D-8 (20-lead, 1.060″ ×.310″ ×.200″), dual-in-line package S F-9 (20-lead, .540″ × .300 × .100″), flat package 1/ 2 C-2 (20-terminal, .358″ × .100″), square chip carrier package

Supply voltage (platinum-silicide) - - - - - - - - - - - −0.5 to +7.0 V dc Supply voltage (titanium-tungsten) - - - - - - - - - - - −0.5 to +12.0 V dc Input voltage range- - - - - - - - - - - - - - - - - - - −0.5 to +5.5 V dc Storage temperature range- - - - - - - - - - - - - - - - −65°C to +150°C Lead temperature (soldering, 10 seconds) - - - - - - - - +260°C Thermal resistance, junction-to-case (θJC) 2/ - - - - - See MIL-M-38510, appendix C Output voltage applied - - - - - - - - - - - - - - - - - −0.5 V to VCC maximum dc 3/ Output sink current- - - - - - - - - - - - - - - - - - - 100 mA Maximum power dissipation (PD) 4/ Device types 01, 02, 03, 04, 05, and 06- - - - - - - - 2.0 W Device types 07, 08, 09, and 10- - - - - - - - - - - - 1.0 W Device types 11, 12, 13, and 14- - - - - - - - - - - - .5 W Maximum junction temperature (TJ)- - - - - - - - - - - - +175°C

Supply voltage - - - - - - - - - - - - - - - - - - - - - 4.5 V dc minimum to 5.5 V dc maximum Minimum high level input voltage - - - - - - - - - - - - 2.0 V dc Maximum low level input voltage - - - - - - - - - - - - 0.8 V dc Case operating temperature range (TC) - - - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

DESC-DWG-81036 REV J
December 4, 1989
MICROCIRCUITS, MEMORY, PROGRAMMABLE LOGIC, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
June 24, 1987
MICROCIRCUITS, MEMORY, PROGRAMMABLE LOGIC, MONOLITHIC SILICON
A description is not available for this item.
June 30, 1986
MICROCIRCUITS, MEMORY, PROGRAMMABLE LOGIC, MONOLITHIC SILICON
A description is not available for this item.
December 30, 1985
MICROCIRCUITS, MEMORY, PROGRAMMABLE LOGIC, MONOLITHIC SILICON
A description is not available for this item.
October 24, 1984
MICROCIRCUITS, MEMORY, PROGRAMMABLE LOGIC, MONOLITHIC SILICON
A description is not available for this item.
October 25, 1983
MICROCIRCUITS, MEMORY, PROGRAMMABLE LOGIC, MONOLITHIC SILICON
A description is not available for this item.
October 20, 1982
MICROCIRCUITS, MEMORY, PROGRAMMABLE LOGIC, MONOLITHIC SILICON
A description is not available for this item.
July 2, 1982
MICROCIRCUITS, MEMORY, PROGRAMMABLE LOGIC, MONOLITHIC SILICON
A description is not available for this item.
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