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DLA - SMD-5962-96901

MICROCIRCUIT, HYBRID, MEMORY, 512K X 16-BIT, SRAM AND FLASH EPROM

inactive
Organization: DLA
Publication Date: 25 February 1997
Status: inactive
Page Count: 25
scope:

This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowest high reliability), class H (high reliability), and class K, (highest reliability) and a choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of radiation hardness assurance levels are reflected in the PIN.

The PIN shall be as shown in the following example:

Device classes H and K RHA marked devices shall meet the MIL-PRF-38534 specified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function Access time 01 WSF512K16-72Q 512K × 16-bit SRAM, 70nS 512K × 16-bit Flash 120nS 02 WSF512K16-39Q 512K × 16-bit SRAM, 35nS 512K × 16-bit Flash 90nS

This device class designator shall be a single letter identifying the product assurance level as follows:

Device class Device Performance documentation D, E, G, H, or K Certification and qualification to MIL-PRF-38534

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style M See figure 1 68 Ceramic, Quad flatpack, dual cavity X See figure 1 66 Hex-in-line, single cavity, withstandoffs

The lead finish shall be as specified in MIL-PRF-38634.

Supply voltage range (VCC) ...................... −0.5 V dc to +7.0 V dc Input voltage range .............................. −0.5 V dc to +7.0 V dc Power dissipation (PD) ........................... 1.43 W Max. Storage temperature range ........................ −65° C to + 150° C Lead temperature (soldering, 10 seconds) ......... +300° C Thermal resistance junction-to-case (θJC) Case outline M ................................. 12.8° C/W Max. Case outline X ................................. 8.7° C/W Max. Data retention (Flash) ........................... 10 years minimum Endurance (Flash) ................................ 10,000 cycles minimum

Supply voltage range (VCC) ....................... +4.5 V dc to +5.5 V dc Input low voltage range (VIL) .................... −0.5 V dc to +0.8 V dc Input high voltage range (VIH) ................... +2.2 V dc to VCC +0.3 V dc Output Voltage, High minimum (VOH) ............... +2.4 V dc Output voltage, Low maximum VOL) ................. +0.4 V dc Case operating temperature (TC) .................. −55° C to +125° C

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Document History

April 29, 2004
MICROCIRCUIT, HYBRID, MEMORY, 512K X 16-BIT, SRAM AND FLASH EPROM
A description is not available for this item.
December 22, 2003
MICROCIRCUIT, HYBRID, MEMORY, 512K X 16-BIT, SRAM AND FLASH EPROM
A description is not available for this item.
May 26, 1999
MICROCIRCUIT, HYBRID, MEMORY, 512K X 16-BIT, SRAM AND FLASH EPROM
This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowest high reliability), class H (high reliability), and class K, (highest...
February 11, 1998
MICROCIRCUIT, HYBRID, MEMORY, 512K X 16-BIT, SRAM AND FLASH EPROM
This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowest high reliability), class H (high reliability), and class K, (highest...
SMD-5962-96901
February 25, 1997
MICROCIRCUIT, HYBRID, MEMORY, 512K X 16-BIT, SRAM AND FLASH EPROM
This drawing documents five product assurance classes, class D (lowest reliability), class E, (exceptions), class G (lowest high reliability), class H (high reliability), and class K, (highest...
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