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DLA - SMD-5962-95845

MICROCIRCUIT, MEMORY, DIGITAL, RADIATION-HARDENED, CMOS/SOI, 32K X 8 STATIC RAM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 26 November 1996
Status: inactive
Page Count: 30
scope:

This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.

The PIN is as shown in the following example:

Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.

The device type(s) identify the circuit function as follows:

Device type Generic number 1/ Circuit function Input/output levels Chip enable Access time 01 32K × 8 CMOS/SOI SRAM CMOS Dual 25 ns 02 32K × 8 CMOS/SOI SRAM TTL Dual 25 ns 03 32K × 8 CMOS/SOI SRAM CMOS Dual 25 ns 04 32K × 8 CMOS/SOI SRAM TTL Dual 25 ns 05 32K × 8 CMOS/SOI SRAM CMOS Dual 20 ns 06 32K × 8 CMOS/SOI SRAM TTL Dual 20 ns

The device class designator is a single letter identifying the product assurance level as follows:

Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535

The case outline(s) are as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style X GDIP1-T28 or CDIP2-T28 28 Dual-in-line Y See figure 1 28 Flat pack Z See figure 1 36 Flat pack

The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M.

Supply voltage range (VCC) ............................ −0.5 V dc to +6.5 V dc DC input voltage range (VIN)........................... −0.5 V dc to VCC + 0.3 V dc DC output voltage range VOUT).......................... −0.5 V dc to VCC + 0.3 V dc Storage temperature range ............................. −65°C to +150°C Lead temperature (soldering, 5 seconds) ............... +270°C Thermal resistance, junction-to-case (ΘJC): Case X .............................................. See MIL-STD-1835 Cases Y and Z ....................................... 2.0°C/watt Output voltage applied to high Z state................. −0.3 V dc to VCC + 0.3 V dc Maximum power dissipation (PD) ........................ 2 watts Maximum junction temperature (TJ) ..................... +175°C

Supply voltage range (VCC) ....................................... 4.5 V dc (min) to 5.5 V dc (max) Supply voltage (VSS).............................................. 0.0 V dc High level input voltage range (VIH): Device type 01, 03, 05 (CMOS levels)............................ 0.7 × VCC to VCC + 0.3 V dc Device type 02, 04, 06 (TTL levels)............................. 2.2 V dc to VCC + 0.3 V dc Low level input voltage range (VIL): Device type 01, 03, 05 (CMOS-levels)............................ −0.3 V dc to 0.3 × VCC Device type 02, 04, 06 (TTL levels) ............................ −0.3 V dc to 0.8 V dc Case operating temperature range (TC)............................. −55°C to +125°C

Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012) ................ 100 percent

intended Use:

Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.

Microcircuits... View More

Document History

November 9, 2020
MICROCIRCUIT, MEMORY, DIGITAL, RADIATION-HARDENED, CMOS/SOI, 32K X 8 STATIC RAM, MONOLITHIC SILICON
Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes...
November 24, 2014
MICROCIRCUIT, MEMORY, DIGITAL, RADIATION-HARDENED, CMOS/SOI, 32K X 8 STATIC RAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
August 8, 2014
MICROCIRCUIT, MEMORY, DIGITAL, RADIATION-HARDENED, CMOS/SOI, 32K X 8 STATIC RAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
April 10, 2014
MICROCIRCUIT, MEMORY, DIGITAL, RADIATION-HARDENED, CMOS/SOI, 32K X 8 STATIC RAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
December 20, 2013
MICROCIRCUIT, MEMORY, DIGITAL, RADIATION-HARDENED, CMOS/SOI, 32K X 8 STATIC RAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are...
October 18, 2011
MICROCIRCUIT, MEMORY, DIGITAL, RADIATION-HARDENED, CMOS/SOI, 32K X 8 STATIC RAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
May 18, 2009
MICROCIRCUIT, MEMORY, DIGITAL, RADIATION-HARDENED, CMOS/SOI, 32K X 8 STATIC RAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
April 8, 2002
MICROCIRCUIT, MEMORY, DIGITAL, RADIATION-HARDENED, CMOS/SOI, 32K X 8 STATIC RAM, MONOLITHIC SILICON
A description is not available for this item.
January 5, 2001
MICROCIRCUIT, MEMORY, DIGITAL, RADIATION-HARDENED, CMOS/SOI, 32K X 8 STATIC RAM, MONOLITHIC SILICON
A description is not available for this item.
June 12, 1997
MICROCIRCUIT, MEMORY, DIGITAL, RADIATION-HARDENED, CMOS/SOI, 32K X 8 STATIC RAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
SMD-5962-95845
November 26, 1996
MICROCIRCUIT, MEMORY, DIGITAL, RADIATION-HARDENED, CMOS/SOI, 32K X 8 STATIC RAM, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
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