NPFC - MIL-PRF-19500/594
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, LOW LEAKAGE, TYPES 1N6664 THRoUgh 1N6666, AND 1N6664R THRU 1N6666R JAN, JANTX, JANTXV, AND JANS
inactive
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| Organization: | NPFC |
| Publication Date: | 7 July 1999 |
| Status: | inactive |
| Page Count: | 1 |
Document History
February 28, 2019
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRA FAST RECOVERY, LOW LEAKAGE, TYPES 1N6664 THROUGH 1N6666, AND 1N6664R THROUGH 1N6666R, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a silicon, fast recovery power rectifier diodes. Four levels of product assurance are provided for each device type as specified in...
September 22, 2016
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRA FAST RECOVERY, LOW LEAKAGE, TYPES 1N6664 THROUGH 1N6666, AND 1N6664R THROUGH 1N6666R, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a silicon, fast recovery power rectifier diodes. Four levels of product assurance are provided for each device type as specified in...
November 2, 2015
Semiconductor Device, Diode, Silicon, Power Rectifier, Ultra Fast Recovery, Low Leakage, Types 1N6664 through 1N6666, and 1N6664R through 1N6666R JAN, JANTX, JANTXV, and JANS
A description is not available for this item.
December 3, 2010
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRA FAST RECOVERY, LOW LEAKAGE, TYPES 1N6664 THROUGH 1N6666, AND 1N6664R THROUGH 1N6666R, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a silicon, fast recovery power rectifier diodes. Four levels of product assurance are provided for each device type as specified in...
November 20, 2008
Semiconductor Device, Diode, Silicon, Power Rectifier, Fast Recovery, Low Leakage, Types 1N6664 thru 1N6666, and 1N6664R thru 1N6666R JAN, JANTX, JANTXV, and JANS
A description is not available for this item.
December 19, 2003
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, LOW LEAKAGE, TYPES 1N6664 THRU 1N6666, AND 1N6664R THRU 1N6666R JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
MIL-PRF-19500/594
July 7, 1999
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, LOW LEAKAGE, TYPES 1N6664 THRoUgh 1N6666, AND 1N6664R THRU 1N6666R JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
July 3, 1998
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, LOW LEAKAGE, TYPES 1N6664 THRU 1N6666, AND 1N6664R THROUGH 1N6666R JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a silicon, fast recovery power rectifier diodes. Four levels of product assurance are provided for each device type as specified in...
August 1, 1995
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, LOW LEAKAGE, TYPES 1N6664 THRU 1N6666, AND 1N6664R THRU 1N6666R JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
December 16, 1994
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, LOW LEAKAGE, TYPES 1N6664 THRU 1N6666, AND 1N6664R THRU 1N6666R JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
October 29, 1993
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, LOW LEAKAGE, TYPES 1N6664 THRU 1N6666, AND 1N6664R THRU 1N6666R JAN, JANTX, JANTXV, AND JANS
This specification covers the detail requirements for a silicon, fast recovery power rectifier diodes. Three levels of product assurance are provided for each device type as specified in MIL-S-19500....