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DLA - SMD-5962-88637 REV A

MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 24 September 1991
Status: inactive
Page Count: 13
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device type Generic number Circuit function tPD 01 20G10 24 Pin generic CMOS PLD 40 ns 02 20G10 24 Pin generic CMOS PLD 30 ns

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline K F-6 (24-lead, .640" × .420" × .090"), flat package L D-9 (24-lead, 1.280" × .310" × .200") dual-line-package 3 C-4 (28-terminal, .460" × .460" × .100") leadless chip carrier package

Supply voltage range - - - - - - - - - - - - - - - −0.5V dc to +7.0 V dc DC voltage applied to outputs in high Z state range - - - - - - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc DC input voltage - - - - - - - - - - - - - - - - - - −3.0 V dc to +7.0 V dc DC program voltage - - - - - - - - - - - - - - - - - +14.0 V dc Maximum power dissipation 1/ - - - - - - - - - - - 1.0 W Lead temperature (soldering, 10 seconds) - - - - - - +260°C Thermal resistance, Junction-to-case (θJC) - - - - - See MIL-M-38510, appendix C Junction temperature (TJ) 2/ - - - - - - - - - - - - +150°C Storage temperature range - - - - - - - - - - - - - −65°C to +150°C Temperature under bias range - - - - - - - - - - - - −55°C to +125°C

Supply voltage range (VCC) - - - - - - - - - - - - - +4.5 V dc to +5.5 V dc Ground voltage (GND) - - - - - - - - - - - - - - - - 0 V dc Minimum high level input voltage range (VIH) - - - - 2.0 V dc to VCC Maximum low level input voltage range (VIL) - - - - −0.5 V dc to +0.8 V dc Case operating temperature range (TC) - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

January 3, 2018
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
November 10, 2010
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
September 29, 2005
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
July 28, 1999
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-88637 REV A
September 24, 1991
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
July 28, 1988
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, FIELD PROGRAMMABLE GATE ARRAY, MONOLITHIC SILICON
A description is not available for this item.
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