DLA - SMD-5962-96526 REV A
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, DUAL 4-INPUT NAND GATE, MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 10 December 1996 |
| Status: | inactive |
| Page Count: | 16 |
Document History
August 27, 2021
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, DUAL 4-INPUT NAND GATE, MONOLITHIC SILICON
Scope.
This drawing documents two product assurance class levels consisting of high reliability (device classes Q) and space application (device class V). A choice of case outlines and lead finishes...
May 17, 2012
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, DUAL 4-INPUT NAND GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
August 24, 2005
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, DUAL 4-INPUT NAND GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
March 31, 1998
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, DUAL 4-INPUT NAND GATE, MONOLITHIC SILICON
Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original...
SMD-5962-96526 REV A
December 10, 1996
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, DUAL 4-INPUT NAND GATE, MONOLITHIC SILICON
A description is not available for this item.
April 3, 1996
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, ADVANCED CMOS, DUAL 4-INPUT NAND GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...