DLA - SMD-5962-92321 REV B
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 2K X 9 BIDIRECTIONAL FIFO, MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 15 May 2002 |
| Status: | inactive |
| Page Count: | 28 |
Document History
April 6, 2017
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 2K X 9 BIDIRECTIONAL FIFO, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
March 3, 2008
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 2K X 9 BIDIRECTIONAL FIFO, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
SMD-5962-92321 REV B
May 15, 2002
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 2K X 9 BIDIRECTIONAL FIFO, MONOLITHIC SILICON
A description is not available for this item.
March 1, 2000
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 2K X 9 BIDIRECTIONAL FIFO, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
Microcircuits covered by...
March 26, 1993
MICROCIRCUIT, MEMORY, DIGITAL, CMOS 2K X 9 BIDIRECTIONAL FIFO, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes B, Q, and M) and...