DLA - SMD-5962-95637 REV B
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, QUAD 2-INPUT NAND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
active, Most Current
| Organization: | DLA |
| Publication Date: | 2 February 2004 |
| Status: | active |
| Page Count: | 23 |
Document History
SMD-5962-95637 REV B
February 2, 2004
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, QUAD 2-INPUT NAND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
A description is not available for this item.
February 24, 1997
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, QUAD 2-INPUT NAND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with MIL-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original...
September 8, 1995
MICROCIRCUIT, DIGITAL, RADIATION HARDENED, HIGH SPEED CMOS, QUAD 2-INPUT NAND GATE, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...