scope:

This specification covers the detail requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome (NiCr) resistors, zapped vertical emitter, tungsten (W), titanium-tungsten (TiW), or platinum silicide as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided for each type and are reflected in the part number. A special test requirement is included in this specification to screen against devices which may contain excess moisture in the package materials or internal atmosphere (see freeze-out test of 4.2d).

The part number shall be in accordance with MIL-M-38510.

The device types shall be as follows:

Device types Circuit Access times (ns) 01 2048 word/4 bits per word PROM with uncommitted 125 collector 02, 08, 10 2048 word/4 bits per word PROM with active pullup 125, 90, 55 and a third high-impedance state output 03 1024 word/8 bits per word PROM with uncommitted 90 collector 04, 09 1024 word/8 bits per word PROM with active pullup 90, 55 and a third high-impedance state output 05 1024 word/8 bits per word PROM with active pullup 90 and a third high-impedance state output 06 1024 word/8 bits per word PROM with uncommitted 90 collector

The device class shall be the product assurance level as defined in MIL-M-38510.

The case outlines shall be designated as follows:

Letter Case outline (see MIL-M-38510, appendix C) J D-3 (24-lead, ½" × 1 ¼") dual-in-line package K F-6 (24-lead, ⅜" × ⅝") flat package V D-6 (18-lead, ¼" × 15/16") dual-in-line package X See figure 1 (18-lead, ⅜" × ⅜") flat package

Supply voltage range - - - - - - - - - - - - - −0.5 V to +7.0 V Input voltage range - - - - - - - - - - - - - - −1.5 V at −10 mA to +5.5 V Storage temperature range - - - - - - - - - - - −65°C to +150°C

Beneficial comments (recommendations, additions, deletions) ahd any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center (RBE-2), Griffiss AFB, NY 13441, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

Lead temperature (soldering, 10 seconds) - - - +300°C Thermal resistance, junction-to-case (O_JC) 1/ - 2/ Output voltage - - - - - - - - - - - - - - - - −0.5 V to +V_CC Output sink current - - - - - - - - - - - - - - 100 mA Maximum power dissipation (P_D) 3/: Device types 01, 02, 08, and 10 - - - - - - - 950 mW Device types 03, 04, 05, 06, and 09 - - - - - 1.1W Maximum junction temperature (T_J) - - - - - - - +175°C

Supply voltage - - - - - - - - - - - - - - - - 4.5 V minimum to 5.5 V maximum Minimum high-level input voltage (V_IH) - - - - 2.0 V Maximum low-level input voltage (V_IL) - - - - - 0.8 V Normalized fanout (each output): Device types 01, 02, 08, and 10 - - - - - - - 12 mA 4/ Device types 03, 04, 05, 06, and 09 - - - - - 8 mA 4/ Case operating temperature range (T_C) - - - - - −55°C to +175°C

intended Use:

Microcircuits conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.