ASTM International - ASTM F41-90
Practice for Preparing Silicon Single Crystals by the Floating-Zone Technique for Evaluation of Polysilicon Ingot (Withdrawn 1996)
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| Organization: | ASTM International |
| Publication Date: | 1 January 1990 |
| Status: | inactive |
| Page Count: | 2 |
| ICS Code (Semiconducting materials): | 29.045 |
Document History
ASTM F41-90
January 1, 1990
Practice for Preparing Silicon Single Crystals by the Floating-Zone Technique for Evaluation of Polysilicon Ingot (Withdrawn 1996)
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