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ASTM International - ASTM F41-90

Practice for Preparing Silicon Single Crystals by the Floating-Zone Technique for Evaluation of Polysilicon Ingot (Withdrawn 1996)

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Organization: ASTM International
Publication Date: 1 January 1990
Status: inactive
Page Count: 2
ICS Code (Semiconducting materials): 29.045

Document History

ASTM F41-90
January 1, 1990
Practice for Preparing Silicon Single Crystals by the Floating-Zone Technique for Evaluation of Polysilicon Ingot (Withdrawn 1996)
A description is not available for this item.
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