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ASTM International - ASTM F1809-97

Standard Guide for Selection and Use of Etching Solutions to Delineate Structural Defects in Silicon

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Organization: ASTM International
Publication Date: 10 June 1997
Status: inactive
Page Count: 9
ICS Code (Semiconducting materials): 29.045
scope:

1.1 This guide covers the formulation, selection, and use of chemical solutions developed to reveal structural defects in silicon wafers. Etching solutions identify crystal defects that adversely affect the circuit performance and yield of silicon devices. Sample preparation, temperature control, etching technique, and choice of etchant are all key factors in the successful use of an etching method. This guide provides information for several etching solutions and allows the user to select according to the need. For further information see Appendix X1 and Figs. 1-32. For a test method for counting preferentially etched or decorated surface defects in silicon wafers see Test Method F 1810.

1.2 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Document History

December 10, 2002
Standard Guide for Selection and Use of Etching Solutions to Delineate Structural Defects in Silicon (Withdrawn 2003)
This standard was transferred to SEMI (www.semi.org) May 2003 1.1 This guide covers the formulation, selection, and use of chemical solutions developed to reveal structural defects in silicon wafers....
ASTM F1809-97
June 10, 1997
Standard Guide for Selection and Use of Etching Solutions to Delineate Structural Defects in Silicon
1.1 This guide covers the formulation, selection, and use of chemical solutions developed to reveal structural defects in silicon wafers. Etching solutions identify crystal defects that adversely...
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