JEDEC - JESD28-A
N-Channel MOSFET Hot-Carrier Data Analysis
inactive
| Organization: | JEDEC |
| Publication Date: | 1 September 2001 |
| Status: | inactive |
| Page Count: | 13 |
Document History
December 1, 2001
Procedure for Measuring N-Channel MOSFET Hot-Carrier-Induced Degradation under DC Stress
This document describes an accelerated test for measuring the hot-carrier-induced degradation of a single n-channel MOSFET using dc bias. The purpose of this document is to specify a minimum set of...
JESD28-A
September 1, 2001
N-Channel MOSFET Hot-Carrier Data Analysis
A description is not available for this item.
January 1, 1995
Procedure for Measuring N-Channel MOSFET Hot-Carrier-Induced Degradation at Maximum Substrate Current under DC Stress
A description is not available for this item.