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ASTM International - ASTM F95-89(2000)

Standard Test Method for Thickness of Lightly Doped Silicon Epitaxial Layers on Heavily Doped Silicon Substrates Using an Infrared Dispersive Spectrophotometer (Withdrawn 2003)

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Organization: ASTM International
Publication Date: 1 January 2000
Status: inactive
Page Count: 7
ICS Code (Semiconducting materials): 29.045
scope:

This standard was transferred to SEMI (www.semi.org) May 2003

1.1 This test method provides a technique for the measurement of the thickness of epitaxial layers of silicon deposited on silicon substrates. A dispersive infrared spectrophotometer is used. For this measurement, the resistivity of the substrate must be less than 0.02[omega] cm at 23oC and the resistivity of the layer must be greater than 0.1[omega] cm at 23oC.

1.2 This technique is capable of measuring the thickness of both n- and p-type layers greater than 2 µm thick. With reduced precision, the technique may also be applied to both n- and p-type layers from 0.5 to 2 µm thick.

1.3 This test method is suitable for referee measurements.

1.4This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Document History

ASTM F95-89(2000)
January 1, 2000
Standard Test Method for Thickness of Lightly Doped Silicon Epitaxial Layers on Heavily Doped Silicon Substrates Using an Infrared Dispersive Spectrophotometer (Withdrawn 2003)
This standard was transferred to SEMI (www.semi.org) May 2003 1.1 This test method provides a technique for the measurement of the thickness of epitaxial layers of silicon deposited on silicon...
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