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ASTM International - ASTM F110-00a

Standard Test Method for Thickness of Epitaxial or Diffused Layers in Silicon by the Angle Lapping and Staining Technique (Withdrawn 2003)

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Organization: ASTM International
Publication Date: 10 December 2000
Status: inactive
Page Count: 4
ICS Code (Semiconducting materials): 29.045
scope:

This standard was transferred to SEMI (www.semi.org) May 2003

1.1 This test method covers a procedure suitable for interlaboratory comparisons of layer thickness. This test method is applicable for layers of any resistivity so long as the layer differs from the silicon substrate under it either in conductivity type or in resistivity by at least one order of magnitude. The method described is destructive in nature but is more widely applicable than the alternate infrared method, Test Method F95.

1.2 For layers with thicknesses between 1 and 25 µm, an interlaboratory precision as defined in Practice E177, of +(0.15 T + 0.5 µm) (3S) can be achieved where T represents thickness expressed in micrometres.

1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. Specific hazard statements are given in Section 8.

Document History

ASTM F110-00a
December 10, 2000
Standard Test Method for Thickness of Epitaxial or Diffused Layers in Silicon by the Angle Lapping and Staining Technique (Withdrawn 2003)
This standard was transferred to SEMI (www.semi.org) May 2003 1.1 This test method covers a procedure suitable for interlaboratory comparisons of layer thickness. This test method is applicable for...
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