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ASTM International - ASTM F950-98

Standard Test Method for Measuring the Depth of Crystal Damage of a Mechanically Worked Silicon Slice Surface by Angle Polishing and Defect Etching

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Organization: ASTM International
Publication Date: 10 May 1998
Status: inactive
Page Count: 5
ICS Code (Semiconducting materials): 29.045
scope:

1.1 This test method describes a technique to measure the depth of damage, on or beneath the surface of silicon wafers prior to any heat treatment of the wafer. Such damage results from mechanical surface treatments such as sawing, lapping, grinding, sandblasting, and shot peening.

1.2 The principal application of this test method is for determining the depth of damage of the non-polished back surface that has had intentionally added work damage.

1.3 The measurement is destructive since a specimen is prepared from a section of a silicon wafer.

1.4 Depth of damage can be measured in the range of 5.0 to 200 [mu]m using this method.

1.5 For referee purposes, a sampling plan shall be agreed upon between the parties to the test before the tests are started.

1.6 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. Specific hazard statements are given in Section 9.

Document History

December 10, 2002
Standard Test Method for Measuring the Depth of Crystal Damage of a Mechanically Worked Silicon Slice Surface by Angle Polishing and Defect Etching (Withdrawn 2003)
This standard was transferred to SEMI (www.semi.org) May 2003 1.1 This test method describes a technique to measure the depth of damage, on or beneath the surface of silicon wafers prior to any heat...
ASTM F950-98
May 10, 1998
Standard Test Method for Measuring the Depth of Crystal Damage of a Mechanically Worked Silicon Slice Surface by Angle Polishing and Defect Etching
1.1 This test method describes a technique to measure the depth of damage, on or beneath the surface of silicon wafers prior to any heat treatment of the wafer. Such damage results from mechanical...
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