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ASTM International - ASTM F1188-00

Standard Test Method for Interstitial Atomic Oxygen Content of Silicon by Infrared Absorption

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Organization: ASTM International
Publication Date: 10 June 2000
Status: inactive
Page Count: 5
ICS Code (Semiconducting materials): 29.045
scope:

1.1 This test method covers the determination of the interstitial oxygen content of single crystal silicon by infrared spectroscopy. This test method requires the use of an oxygen-free reference specimen and a set of calibration standards, such as those comprising NIST SRM 2551. It permits, but does not require, the use of a computerized spectrophotometer.

1.2 The useful range of oxygen concentration measurable by this test method is from 1 X 1016 atoms/cm3 to the maximum amount of interstitial oxygen soluble in silicon.

1.3 The oxygen concentration obtained using this test method assumes a linear relationship between the interstitial oxygen concentration and the absorption coefficient of the 1107 cm-1 band associated with interstitial oxygen in silicon.

1.4 This standard does not purport to address all of the safety problems, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Document History

December 10, 2002
Standard Test Method for Interstitial Atomic Oxygen Content of Silicon by Infrared Absorption with Short Baseline (Withdrawn 2003)
This standard was transferred to SEMI (www.semi.org) May 2003 1.1 This test method covers the determination of the interstitial oxygen content of single crystal silicon by measurement of an infrared...
ASTM F1188-00
June 10, 2000
Standard Test Method for Interstitial Atomic Oxygen Content of Silicon by Infrared Absorption
1.1 This test method covers the determination of the interstitial oxygen content of single crystal silicon by infrared spectroscopy. This test method requires the use of an oxygen-free reference...
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