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ASTM International - ASTM F980-16

Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices

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Organization: ASTM International
Publication Date: 1 December 2016
Status: active
Page Count: 7
ICS Code (Semiconducting materials): 29.045
significance And Use:

5.1 Electronic circuits used in many space, military, and nuclear power systems may be exposed to various levels and time profiles of neutron radiation. It is essential for the design and... View More

scope:

1.1 This guide defines the requirements and procedures for testing silicon discrete semiconductor devices and integrated circuits for rapid-annealing effects from displacement damage resulting from neutron radiation. This test will produce degradation of the electrical properties of the irradiated devices and should be considered a destructive test. Rapid annealing of displacement damage is usually associated with bipolar technologies.

1.1.1 Heavy ion beams can also be used to characterize displacement damage annealing (1)2, but ion beams have significant complications in the interpretation of the resulting device behavior due to the associated ionizing dose. The use of pulsed ion beams as a source of displacement damage is not within the scope of this standard.

1.2 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.

1.3 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to consult and establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Document History

ASTM F980-16
December 1, 2016
Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices
1.1 This guide defines the requirements and procedures for testing silicon discrete semiconductor devices and integrated circuits for rapid-annealing effects from displacement damage resulting from...
December 1, 2010
Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices
1.1 This guide defines the requirements and procedures for testing silicon discrete semiconductor devices and integrated circuits for rapid-annealing effects from displacement damage resulting from...
June 10, 1996
Standard Guide for Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices
1.1 This guide defines the requirements and procedures for testing silicon discrete semiconductor devices and integrated circuits for rapid-annealing effects from displacement damage resulting from...
January 1, 1992
Guide for The Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices
1.1 This guide defines the requirements and procedures for testing silicon discrete semiconductor devices and integrated circuits for rapid-annealing effects from displacement damage resulting from...
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