NPFC - MIL-PRF-19500/608
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, POWER RECTIFIER, COMMON CATHODE, COMMON ANODE CENTER TAP, TYPES 1N6660, AND 1N6660R JAN, JANTX, JANTXV, AND JANS
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| Organization: | NPFC |
| Publication Date: | 10 December 1997 |
| Status: | inactive |
| Page Count: | 11 |
scope:
This specification covers the performance requirements for a silicon, schottky, power rectifier diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
See figure 1 (T0-254AA isolated).
RθJC = 1.65°C/W maximum, RθJA = 40°C/W maximum, each individual diode. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
Document History
November 18, 2022
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, POWER RECTIFIER, COMMON CATHODE, COMMON ANODE, DOUBLER, TYPE 1N6660, CASE MOUNT PACKAGE, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
Scope.
This specification covers the performance requirements for a silicon, schottky, power rectifier diodes. Four levels of product assurance are provided for each device type as specified in...
November 7, 2018
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, POWER RECTIFIER, COMMON CATHODE, COMMON ANODE, DOUBLER, TYPE 1N6660, CASE MOUNT PACKAGE, QUALITY LEVELS JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a silicon, schottky, power rectifier diodes. Four levels of product assurance are provided for each device type as specified in...
March 18, 2015
Semiconductor Device, Diode, Silicon, Schottky, Power Rectifier,Common Cathode, Common Anode Center Tap, Doubler, Types 1N6660, 1N6660CCT1, 1N6660R, 1N6660CAT1, and 1N6660DT1, JAN, JANTX, JANTXV, and JANS
A description is not available for this item.
March 8, 2010
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, POWER RECTIFIER, COMMON CATHODE, COMMON ANODE CENTER TAP, DOUBLER, TYPES 1N6660, 1N6660CCT1, 1N6660R, 1N6660CAT1, AND 1N6660DT1, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a silicon, schottky, power rectifier diodes. Four levels of product assurance are provided for each device type as specified in...
August 24, 2009
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, POWER RECTIFIER, COMMON CATHODE, COMMON ANODE CENTER TAP, DOUBLER, TYPES 1N6660, 1N6660CCT1, 1N6660R, 1N6660CAT1, AND 1N6660DT1, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a silicon, schottky, power rectifier diodes. Four levels of product assurance are provided for each device type as specified in...
July 20, 2007
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, POWER RECTIFIER, COMMON CATHODE, COMMON ANODE CENTER TAP, DOUBLER, TYPES 1N6660, 1N6660CCT1, 1N6660R, 1N6660CAT1, AND 1N6660DT1, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a silicon, schottky, power rectifier diodes. Four levels of product assurance are provided for each device type as specified in...
August 17, 2005
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, POWER RECTIFIER, COMMON CATHODE, COMMON ANODE CENTER TAP, DOUBLER, TYPES 1N6660, 1N6660CCT1, 1N6660R, 1N6660CAT1, AND 1N6660DT1 JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a silicon, schottky, power rectifier diodes. Four levels of product assurance are provided for each device type as specified in...
December 1, 2003
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, POWER RECTIFIER, COMMON CATHODE, COMMON ANODE CENTER TAP, DOUBLER, TYPES 1N6660, 1N6660CCT1, 1N6660R, 1N6660CAT1, AND 1N6660DT1 JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
February 22, 1999
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, POWER RECTIFIER, COMMON CATHODE, COMMON ANODE CENTER TAP, TYPES 1N6660, AND 1N6660R JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
MIL-PRF-19500/608
December 10, 1997
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, POWER RECTIFIER, COMMON CATHODE, COMMON ANODE CENTER TAP, TYPES 1N6660, AND 1N6660R JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for a silicon, schottky, power rectifier diodes. Four levels of product assurance are provided for each device type as specified in...
April 22, 1993
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY, POWER RECTIFIER, COMMON CATHODE, COMMON ANODE CENTER TAP, TYPES 1N6660 AND 1N6660R JANTX, JANTXV, AND JANS
This specification covers the detail requirements for a silicon, schottky, power rectifier diodes. Three levels of product assurance are provided for each device type as specified in MIL-S-19500....