DLA - SMD-5962-95720 REV B
MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, TRIPLE 3-INPUT AND GATE, MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 25 August 2000 |
| Status: | inactive |
| Page Count: | 23 |
Document History
June 29, 2016
MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, RADIATION HARDENED, TRIPLE 3-INPUT AND GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
May 20, 2009
MICROCIRCUIT, DIGITAL, HIGH SPEED CMOS, RADIATION HARDENED, TRIPLE 3-INPUT AND GATE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
SMD-5962-95720 REV B
August 25, 2000
MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, TRIPLE 3-INPUT AND GATE, MONOLITHIC SILICON
A description is not available for this item.
July 31, 1998
MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, TRIPLE 3-INPUT AND GATE, MONOLITHIC SILICON
This appendix establishes minimum requirements for microcircuit die to be supplied under the Qualified Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535...
September 11, 1995
MICROCIRCUIT, DIGITAL, RADIATION HARDENED HIGH SPEED CMOS, TRIPLE 3-INPUT AND GATE, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...