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NPFC - MIL-M-38510/265

MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 524,288 BIT, ELECTRICALLY ERASABLE, PROGRAMMABLE READ-ONLY MEMORY (EEPROM) MONOLITHIC SILICON

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Organization: NPFC
Publication Date: 12 July 1990
Status: inactive
Page Count: 37
scope:

This specification covers the detail requirements for monolithic silicon, CMOS, 64K words × 8 bit, electrically clearable, writable read-only memory microcircuits. Two product assurance classes (S and B), a choice of lead finish and two package types are provided for each device and are reflected in the complete Part Number or Identifying Number (PIN).

The PIN shall be in accordance with MIL-M-38510.

The device types shall be as follows:

Device Circuit Access type organization time Endurance 01 64K words × 8 bit 300 ns 100 cycles 02 64K words × 8 bit 300 ns 1,000 cycles 03 64K words × 8 bit 250 ns 100 cycles 04 64K words × 8 bit 250 ns 1,000 cycles 05 64K words × 8 bit 200 ns 100 cycles 06 64K words × 8 bit 200 ns 1,000 cycles 07 64K words × 8 bit 150 ns 100 cycles 08 64K words × 8 bit 150 ns 1,000 cycles 09 64K words × 8 bit 120 ns 100 cycles 10 64K words × 8 bit 120 ns 1,000 cycles

The device class shall be the product assurance level as defined in MIL-M-38510.

The case outlines shall be designated as follows:

Letter Case outline (see MIL-M-38510, appendix C) X See figure 1 (32-lead, 1.685" × .600" × .225"), dual-in-line package Y C-12 (32-terminal, .560" × .458" × .120"), rectangular chip carrier package Z See figure 1 (32-lead, .830" × .416" × .120"), flat package

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center, RBE-2, Griffiss AFB, NY 13441, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

Supply voltage range (VCC) - - - - - - - - - - - - - −0.3 V dc to +6.0 V dc Storage temperature range - - - - - - - - - - - - - −65° C to +150°C Maximum power dissipation (PD) - - - - - - - - - - - +1.0 W Lead temperature (soldering, 10 seconds) - - - - - - +300°C Junction temperature (TJ) 2/ - - - - - - - - - - - - +175°C Thermal resistance, junction-to-case (θJC) 3/ Case X - - - - - - - - - - - - - - - - - - - - - - 21°C/W Cases Y and Z - - - - - - - - - - - - - - - - - - 18°C/W Input voltage range (VIL VIH) - - - - - - - - - - - −0.5 V dc to VCC 1.0 Endurance (minimum of) Device types 01, 03, 05, 07, and 09 - - - - - - - - 100 cycles/byte Device types 02, 04, 06, 08, and 10 - - - - - - - - 1,000 cycles/byte Program/erase voltage (VPP) - - - - - - - - - - - - 14.0 V dc Data retention - - - - - - - - - - - - - - - - - - 10 years (minimum)

Supply voltage range (VCC) - - - - - - - - - - - - - +4.5 V dc to +5.5 V dc Case operating temperature range (TC) - - - - - - - −55°C to +125°C Input voltage, low (VIL) - - - - - - - - - - - - - - −0.3 V dc to +0.8 V dc Input voltage, high (VIH) - - - - - - - - - - - - - +2.0 V dc to VCC +0.3 V Chip clear voltage (VP) - - - - - - - - - - - - - - 11.4 V dc to 12.6 V dc

intended Use:

Microcircuits conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.

Document History

MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 524,288 BIT, ELECTRICALLY ERASABLE, PROGRAMMABLE READ-ONLY MEMORY (EEPROM) MONOLITHIC SILICON
A description is not available for this item.
July 24, 1995
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 524,288 BIT, ELECTRICALLY ERASABLE, PROGRAMMABLE READ-ONLY MEMORY (EEPROM) MONOLITHIC SILICON
A description is not available for this item.
MIL-M-38510/265
July 12, 1990
MICROCIRCUITS, MEMORY, DIGITAL, CMOS, 524,288 BIT, ELECTRICALLY ERASABLE, PROGRAMMABLE READ-ONLY MEMORY (EEPROM) MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, CMOS, 64K words × 8 bit, electrically clearable, writable read-only memory microcircuits. Two product assurance classes (S...

References

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