DLA - MIL-PRF-19500/586D
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, HERMETIC TYPES 1N5819-1, 1N5819UR-1, 1N6650-1, 1N6650UR-1, 1N6761-1 AND 1N6761UR-1 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
inactive
| Organization: | DLA |
| Publication Date: | 10 July 1998 |
| Status: | inactive |
| Page Count: | 16 |
scope:
This specification covers the performance requirements for silicon, Schottky barrier diodes. Four levels of product assurance are provided for each encapsulated device types as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die.
See figure 1 (DO-41), figure 2 (DO-213AB), figures 3 and 4 (JANC die) dimensions.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
Unless otherwise specified, primary electrical characteristics at TA = +25°C.
Document History
February 17, 2021
SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER, SCHOTTKY BARRIER, ENCAPSULATED (AXIAL LEADED AND SURFACE MOUNT) AND UNENCAPSULATED, TYPES 1N5817−1, 1N5819−1, AND 1N6761−1, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
Scope.
This specification covers the performance requirements for silicon, Schottky barrier diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated...
November 17, 2019
SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER, SCHOTTKY BARRIER, ENCAPSULATED (AXIAL LEADED AND SURFACE MOUNT) AND UNENCAPSULATED, TYPES 1N5817−1, 1N5819−1, AND 1N6761−1, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
Scope.
This specification covers the performance requirements for silicon, Schottky barrier diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated...
August 26, 2019
SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER, SCHOTTKY BARRIER, ENCAPSULATED (AXIAL LEADED AND SURFACE MOUNT) AND UNENCAPSULATED, TYPES 1N5817−1, 1N5819−1, AND 1N6761−1, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
Scope.
This specification covers the performance requirements for silicon, Schottky barrier diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated...
December 15, 2017
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, ENCAPSULATED (AXIAL LEADED AND SURFACE MOUNT) AND UNENCAPSULATED, TYPES 1N5817–1, 1N5819–1, AND 1N6761–1, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, Schottky barrier diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device...
March 26, 2014
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, TYPES 1N5817–1, 1N5817UR–1, 1N5819–1, 1N5819UR–1, 1N6761–1, AND 1N6761UR–1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, Schottky barrier diodes. Four levels of product assurance are provided for each encapsulated device types as specified in...
April 22, 2011
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, HERMETIC, TYPES 1N5817-1, 1N5817UR-1, 1N5819-1, 1N5819UR-1, 1N6761-1, AND 1N6761UR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, Schottky barrier diodes. Four levels of product assurance are provided for each encapsulated device types as specified in...
January 5, 2008
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, HERMETIC, TYPES 1N5819-1, 1N5819UR-1, 1N6761-1, AND 1N6761UR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, Schottky barrier diodes. Four levels of product assurance are provided for each encapsulated device types as specified in...
November 26, 2007
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, HERMETIC, TYPES 1N5819-1, 1N5819UR-1, 1N6761-1, AND 1N6761UR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, Schottky barrier diodes. Four levels of product assurance are provided for each encapsulated device types as specified in...
November 3, 2005
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, HERMETIC, TYPES 1N5819-1, 1N5819UR-1, 1N6761-1, AND 1N6761UR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, Schottky barrier diodes. Four levels of product assurance are provided for each encapsulated device types as specified in...
October 17, 2003
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, HERMETIC, TYPES 1N5819-1, 1N5819UR-1, 1N6761-1, AND 1N6761UR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, Schottky barrier diodes. Four levels of product assurance are provided for each encapsulated device types as specified in...
February 16, 2001
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, HERMETIC TYPES 1N5819-1, 1N5819UR-1, 1N6650-1, 1N6650UR-1, 1N6761-1 AND 1N6761UR-1 JAN, JANTX, JANTXV, JANS, JANJ, JANHC, AND JANKC
A description is not available for this item.
April 14, 2000
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, HERMETIC TYPES 1N5819-1, 1N5819UR-1, 1N6650-1, 1N6650UR-1, 1N6761-1 AND 1N6761UR-1 JAN, JANTX, JANTXV, JANS, JANJ, JANHC, AND JANKC
This specification covers the performance requirements for silicon, Schottky barrier diodes. Five levels of product assurance are provided for each encapsulated device types as specified in...
MIL-PRF-19500/586D
July 10, 1998
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, HERMETIC TYPES 1N5819-1, 1N5819UR-1, 1N6650-1, 1N6650UR-1, 1N6761-1 AND 1N6761UR-1 JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, Schottky barrier diodes. Four levels of product assurance are provided for each encapsulated device types as specified in...
June 20, 1997
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, HERMETIC TYPES lN5819-1,1N5819UR-l, 1N6650-1, AND 1N6650UR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, Schottky barrier diodes. Four levels of product assurance are provided for each encapsulated device types as specified in...
June 27, 1996
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, HERMETIC, TYPES 1N5819-1, 1N5819UR-1, 1N6761-1, AND 1N6761UR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
July 22, 1994
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, HERMETIC, TYPES 1N5819-1, 1N5819UR-1, 1N6761-1, AND 1N6761UR-1, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the detail requirements for silicon, Schottky barrier diodes. Four levels of product assurance are provided for each device type as specified in MIL-S-19500. Two levels of...
March 21, 1994
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, TYPES 1N5819-1, lN5819UR-1, IN6650-1, AND lN6650UR-1, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the detail requirements for silicon, Schottky barrier diodes. Three levels of product assurance are provided for each device type as specified in MIL-S-19500. Two levels of...
November 18, 1993
SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER, TYPES 1N5819-1, lN5819UR-1, IN6650-1, AND lN6650UR-1, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
February 1, 1993
SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, SCHOTTKY BARRIER, TYPES 1N5819-1, lN5819UR-1, 1N6650-1, and lN6650UR-1, JANTX, JANTXV, AND JANC
This specification covers the detail requirements for silicon, Schottky barrier diodes. Three levels of product assurance are provided for each device type as specified in MIL-S-19500.
See figure I...