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DLA - SMD-5962-86844 REV C

MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, NOR GATES, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 20 November 1992
Status: inactive
Page Count: 12
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device type shall identify the circuit function as follows:

Device type Generic number Circuit function 01 54ALSO2 Quadruple, two-input positive NOR gate

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline D F-2 (14-lead, .390" × .260" × .085"), flat package 2 C-2 (20 terminal, .358" × .358" × .100"), square chip carrier package

Supply voltage range - - - - - - - - - - - - - - - 0.5 V dc minimum to +7.0 V dc maximum Input voltage range- - - - - - - - - - - - - - - - −1.5 V dc at −18 mA to +7.0 V dc Storage temperature- - - - - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) per device 1/ - - - 22.0 mW Lead temperature (soldering, 10 seconds) - - - - - +300°C Thermal resistance, junction-to-case (θJC) - - - - See MIL-M-38510, appendix C Junction temperature (TJ) - - - - - - - - - - - +175°C

Supply voltage range (VCC) - - - - - - - - - - - - +4.5 V dc minimum to +5.5 V dc maximum Minimum high level input voltage (VIH) - - - - - - 2.0 V dc Maximum low level input voltage (VIL): TC=+125°C - - - - - - - - - - - - - - - - - - - 0.7 V dc TC= −55°C - - - - - - - - - - - - - - - - - - - 0.8 V dc TC= +25°C - - - - - - - - - - - - - - - - - - - 0.8 V dc Case operating temperature range (TC) - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

June 21, 2023
MICROCIRCUIT, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, NOR GATES, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
April 13, 2018
MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, NOR GATES, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
March 7, 2013
MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, NOR GATES, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
February 3, 2006
MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, NOR GATES, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-86844 REV C
November 20, 1992
MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, NOR GATES, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
July 10, 1992
MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, NOR GATES, MONOLITHIC SILICON
A description is not available for this item.
April 4, 1988
MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, NOR GATES, MONOLITHIC SILICON
A description is not available for this item.
August 21, 1987
MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, NOR GATES, MONOLITHIC SILICON
A description is not available for this item.

References

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