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DLA - SMD-5962-89945 REV A

MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, 8-BIT D-TYPE EDGE-TRIGGERED READ BACK LATCHES, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 14 April 1992
Status: inactive
Page Count: 15
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device type shall identify the circuit function as follows:

Device type Generic number Circuit function 01 54ALS996 8-bit D-type edge-triggered read back latches

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline Letter Case outline K F-6 (24,-lead, .640" × .420" × .090"), flat package L D-9 (24,-lead, 1.280" × .310" × .200"), dual-in-line package 3 C-4 (28-terminal, .460" × .460" × .100"), square chip carrier package

Supply voltage range - - - - - - - - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc DC input voltage (G,[R bar][D bar],[E bar][N bar],CLK and T/[C bar]) - - - - - - - - - - - - +7.0 V dc Voltage applied to D and to disabled three-state outputs - - - +5.5 V dc Storage temperature range - - - - - - - - - - - - - - - - - - −65°C to +150°C Lead temperature (soldering, 10 seconds) - - - - - - - - - - - +300°C Thermal resistance, junction-to-case (θJC) - - - - - - - - - - See MIL-M-38510, appendix C Maximum power dissipation (PD) 1/ - - - - - - - - - - - - - - - 467.5 mW Junction temperature (TJ) - - - - - - - - - - - - - - - - - - +175°C

Supply voltage range (VCC) - - - - - - - - - - - - - - - - - - +4.5 V dc to +5.5 V dc Minimum high level input voltage (VIH): [G bar] and [R bar][D bar] - - - - - - - - - - - - - - - - - - - - - - - - - - +2.2 V dc All others - - - - - - - - - - - - - - - - - - - - - - - - - +2.0 V dc Maximum low level input voltage (VIL) - - - - - - - - - - - - - 0.8 V Case operating temperature range (TC) - - - - - - - - - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

April 12, 2021
MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, 8-BIT D-TYPE EDGE-TRIGGERED READ BACK LATCHES, MONOLITHIC SILICON
Scope. This drawing describes device requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A.
August 8, 2016
MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, 8-BIT D-TYPE EDGE-TRIGGERED READ BACK LATCHES, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
July 6, 2006
MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, 8-BIT D-TYPE EDGE-TRIGGERED READ BACK LATCHES, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD-5962-89945 REV A
April 14, 1992
MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, 8-BIT D-TYPE EDGE-TRIGGERED READ BACK LATCHES, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
September 6, 1989
MICROCIRCUITS, DIGITAL, BIPOLAR, ADVANCED LOW POWER SCHOTTKY TTL, 8-BIT D-TYPE EDGE-TRIGGERED READ BACK LATCHES, MONOLITHIC SILICON
A description is not available for this item.

References

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