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NPFC - MIL-M-38510/613

MICROCIRCUITS, DIGITAL, VHSIC, CMOS, 65,536-BIT SELECTABLE MODE, STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON

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Organization: NPFC
Publication Date: 12 May 1988
Status: active
Page Count: 33
scope:

This specification covers the detail requirements for monolithic silicon, CMOS, 65,536-bit selectable operating mode, static random access memory microcircuits. These microcircuits conform to the functional throughput rate as defined in the phase I very high speed integrated circuit (VHSIC) program. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number.

The part number shall be in accordance with MIL-M-38510.

The device types shall be as follows:

Device type Circuit organization Access time 01 16,384 words × 4 bits 35 ns 02 16,384 words × 4 bits 45 ns 03 16,384 words × 4 bits 55 ns

The device class shall be the product assurance level as defined in MIL-STD-883.

The case outline shall be designated as follows:

Letter Case outline (see MIL-M-38510, appendix C) X Figure 1 (22-lead, 1.115" × .320" × .I70"), ceramic side brazed dual-in-line package

Supply voltage (VCC) - - - - - - - - - - - - - - −0.5 V dc to +7.0 V dc All input or output voltages - - - - - - - - - - −0.5 V dc to +7.0 V dc DC output current- - - - - - - - - - - - - - - - 20 mA Storage temperature range- - - - - - - - - - - - −65°C to +150°C Lead temperature (soldering, 10 seconds) - - - - 300°C Thermal resistance, junction-to-case (θJC) - - - 15°C/W Maximum power dissipation (PD) - - - - - - - - - 1.0 W Maximum junction temperature (TJ) 1/- - - - - - 175°C

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Rome Air Development Center (RBE-2), Griffiss AFB, NY 13441-5700, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

Supply voltage (VCC) - - - - - - - - - - - - - - 4.5 V dc to 5.5 V dc Ground (VSS) - - - - - - - - - - - - - - - - - - 0.0 V dc High level input voltage (VIH) - - - - - - - - - 2.2 V dc to VCC Low level input voltage (VIL)- - - - - - - - - - −0.5 V dc to 0.8 V dc Case operating temperature range (TC)- - - - - - −55°C to +125°C

intended Use:

Microcircuits conforming to this specification are intended for original equipment design applications and logistic support of existing equipment.

Document History

October 5, 2020
Microcircuits, Digital, VHSIC, CMOS, 65,536-BIT Selectable Mode, Static Random Access Memory (SRAM), Monolithic Silicon
A description is not available for this item.
December 22, 2010
Microcircuits, Digital, VHSIC, CMOS, 65,536-BIT Selectable Mode, Static Random Access Memory (SRAM), Monolithic Silicon
A description is not available for this item.
March 9, 2006
MICROCIRCUITS, DIGITAL, VHSIC, CMOS, 65,536-BIT SELECTABLE MODE, STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
A description is not available for this item.
June 5, 2001
MICROCIRCUITS, DIGITAL, VHSIC, CMOS, 65,536-BIT SELECTABLE MODE, STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
A description is not available for this item.
July 28, 1995
MICROCIRCUITS, DIGITAL, VHSIC, CMOS, 65,536-BIT SELECTABLE MODE, STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
A description is not available for this item.
MIL-M-38510/613
May 12, 1988
MICROCIRCUITS, DIGITAL, VHSIC, CMOS, 65,536-BIT SELECTABLE MODE, STATIC RANDOM ACCESS MEMORY (SRAM), MONOLITHIC SILICON
This specification covers the detail requirements for monolithic silicon, CMOS, 65,536-bit selectable operating mode, static random access memory microcircuits. These microcircuits conform to the...

References

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