DLA - SMD-5962-87591 REV A
MICROCIRCUIT, LINEAR, HIGH-SPEED, ANALOG TO DIGITAL CONVERTER, MONOLITHIC SILICON
| Organization: | DLA |
| Publication Date: | 24 January 1990 |
| Status: | inactive |
| Page Count: | 17 |
scope:
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".
The complete part number shall be as shown in the following example:
The device types shall identify the circuit function as follows:
Device type Generic number Circuit function 01 AD7572 12.5-microsecond, 11-bit linearity, 12-bit resolution CMOS A/D converter with 45 ppm/°C reference. 02 AD7572 12.5-microsecond, 11-bit linearity, 12-bit resolution CMOS A/D converter with 25 ppm/°C reference. 03 AD7572 12.5-microsecond, 12-bit linearity, 12-bit resolution CMOS A/D converter with 25 ppm/°C reference. 04 AD7572 5-microsecond, 11-bit linearity, 12-bit resolution CMOS A/D converter with 45 ppm/°C reference. 05 AD7572 5-microsecond, 11-bit linearity, 12-bit resolution CMOS A/D converter with 25 ppm/°C reference. 06 AD7572 5-microsecond, 12-bit linearity, 12-bit resolution CMOS A/D converter with 25 ppm/°C reference.
The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:
Outline letter Case outline L D-9 (24-lead, 1.280" × .310" × .200"), dual-in-line package 3 C-4 (28-terminal, .460" × .460" × .100"), leadless ceramic square chip carrier package
(TA = +25°C, unless otherwise noted).
VDD to DGND - - - - - - - - - - - - - - - - - - - - - −0.3 V dc to +7 V dc VSS to DGND - - - - - - - - - - - - - - - - - - - - - +0.3 V dc to −17 V dc AGND to DGND - - - - - - - - - - - - - - - - - - - - −0.3 V dc, VDD +0.3 V dc AIN to AGND - - - - - - - - - - - - - - - - - - - - - −15 V dc to +15 V dc Digital input voltage to DGND - - - - - - - - - - - - −0.3 V dc, VDD +0.3 V dc Digital output voltage to DGND- - - - - - - - - - - - −0.3 V dc, VDD +0.3 V dc Storage temperature - - - - - - - - - - - - - - - - - −65°C to +150°C Power dissipation ≤ +75°C - - - - - - - - - - - - - - 1,000 mW 1/ Thermal resistance (θJC): Case L - - - - - - - - - - - - - - - - - - - - - - See MIL-M-38510, appendix C Case 3 - - - - - - - - - - - - - - - - - - - - - - See MIL-M-38510, appendix C Junction temperature (TJ) - - - - - - - - - - - - - - +175°C
Operating voltage range: Positive supply (VDD) - - - - - - - - - - - - - - +4.75 V dc to +5.25 V dc Negative supply (VSS) - - - - - - - - - - - - - - −14.25 V dc to −15.75 V dc Clock frequency (fCLK) - - - - - - - - - - - - - 1.0 MHz for device types 01, 02, and 03 2.5 MHz for device types 04, 05, and 06 Analog input voltage range (AIN) (specifications apply to slow memory mode) - - - 0 to +5.0 V dc Ambient operating temperature range (TA)- - - - - - −55°C to +125°C
intended Use:
Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More
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