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DLA - SMD-5962-88676

MICROCIRCUITS, MEMORY, DIGITAL, CMOS 2K X 8 EEPROM, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 13 February 1989
Status: inactive
Page Count: 19
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device types shall identify the circuit function as follows:

Device Generic Circuit Access Write End of write type number function time speed Write mode indicator Endurance 01 (see 6.4) 2K × 8 EEPROM 90 ns 1.0 ms byte [D bar][A bar][T bar][A bar] polling 10,000 cycles 02 (See 6.4) 2K × 8 EEPROM 70 ns 1.0 ms byte [D bar][A bar][T bar][A bar] polling 10,000 cycles 03 (see 6.4) 2K × 8 EEPROM 55 ns 1.0 ms byte [D bar][A bar][T bar][A bar] polling 10,000 cycles

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline J D-3 (24-lead, 1.290" × .610" × .225"), dual-in-line package L D-9 (24-lead, 1.280" × .310" × .200"), dual-in-line package X C-12 (32-terminal, .560" × .458" × .120"), rectangular chip carrier package

Supply voltage range (VCC) - - - - - - - - - - - - −0.3 V dc to +6.25 V dc Storage temperature range- - - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) - - - - - - - - - - 1.0 W Lead temperature (soldering, 10 seconds) - - - - - +300°C Junction temperature (TJ) 2/ - - - - - - - - - - - +175°C Thermal resistance, junction-to-case (θJC) - - - - See MIL-M-38510, appendix C Input voltage range (VIL, VIH) - - - - - - - - - - −0.3 V dc to +6.25 V dc Data retention - - - - - - - - - - - - - - - - - - 10 years (minimum) Endurance- - - - - - - - - - - - - - - - - - - - - 10,000 cycles (minimum) Chip clear voltage (VH)- - - - - - - - - - - - - - 12.0 V dc

Supply voltage range (VCC) - - - - - - - - - - - - - +4.5 V dc to +5.5 V dc Case operating temperature range (Tc)- - - - - - - - −55°C to +125°C Input voltage, low range (VIL) - - - - - - - - - - - −0.1 V dc to +0.8 V dc Input voltage, high range (VIH)- - - - - - - - - - - +2.0 V dc to VCC +0.3 V dc

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

January 3, 2018
MICROCIRCUITS, MEMORY, DIGITAL, CMOS 2K X 8 EEPROM, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
April 1, 2011
MICROCIRCUITS, MEMORY, DIGITAL, CMOS 2K X 8 EEPROM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
SMD-5962-88676
February 13, 1989
MICROCIRCUITS, MEMORY, DIGITAL, CMOS 2K X 8 EEPROM, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....

References

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