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DLA - SMD-5962-89845 REV A

MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, QUAD 2-INPUT NAND SCHMITT TRIGGER, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 16 April 1992
Status: inactive
Page Count: 14
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete PIN shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function 01 54HCT132 Quad 2-input NAND Schmitt trigger, TTL compatible inputs 02 54HC132 Quad 2-input NAND Schmitt trigger

The case outline(s) shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline C D-1 (14-lead, .785" × .310" × .200"), dual-in-line package D F-2 (14-lead, .390" × .260" × .085"), flat package 2 C-2 (20 terminal, .358" × .358" × .100"), leadless chip carrier package

Supply voltage range - - - - - - - - - - - - - - −0.5 v dc to +7.0 V dc DC input voltage range - - - - - - - - - - - - - −0.5 v dc to VCC + 0.5 V dc DC output voltage range - - - - - - - - - - - - −0.5 V dc to VCC + 0.5 V dc DC input clamp diode current - - - - - - - - - - ±20 mA DC output clamp diode current (per pin) - - - - ±20 mA DC output current (per pin) - - - - - - - - - - ±25 mA DC VCC or GND current - - - - - - - - - - - - - ±50 mA Storage temperature range - - - - - - - - - - - −65°C to +150°C Maximum power dissipation (PD) - - - - - - - - - 500 mW 2/ Lead temperature (soldering, 10 seconds) - - - - +300°C Thermal resistance, junction-to-case (ΘJC)- - - See MIL-M-38510, appendix C Junction temperature (TJ) - - - - - - - - - - - +175°C

Supply voltage range (VCC): Device type 01 - - - - - - - - - - - - - - - - - +4.5 V dc to +5.5 V dc Device type 02 - - - - - - - - - - - - - - - - - +2.0 V dc to +6.0 V dc Input voltage range (VIN)- - - - - - - - - - - - 0.0 V dc to VCC Output voltage range (VOUT)- - - - - - - - - - - 0.0 V dc to VCC Case operating temperature range (TC) - - - - - −55°C +125°C Input rise or full time (tr, tf): VCC = 4.5 V - - - - - - - - - - - - - - - - - 0 to unlimited

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

November 29, 2021
MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, QUAD 2-INPUT NAND SCHMITT TRIGGER, MONOLITHIC SILICON
Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead...
June 29, 2015
MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, QUAD 2-INPUT NAND SCHMITT TRIGGER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
August 12, 2009
MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, QUAD 2-INPUT NAND SCHMITT TRIGGER, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
February 8, 2002
MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, QUAD 2-INPUT NAND SCHMITT TRIGGER, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-89845 REV A
April 16, 1992
MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, QUAD 2-INPUT NAND SCHMITT TRIGGER, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
September 7, 1989
MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, QUAD 2-INPUT NAND SCHMITT TRIGGER, MONOLITHIC SILICON
A description is not available for this item.
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