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DLA - SMD-5962-87539 REV H

MICROCIRCUIT, MEMORY, DIGITAL, CMOS UV ERASABLE, PROGRAMMABLE ARRAY LOGIC, MONOLITHIC SILICON

inactive
Organization: DLA
Publication Date: 29 July 1993
Status: inactive
Page Count: 20
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device type(s) shall identify the circuit function as follows:

Device type Generic number Circuit function tPD 01 C22V10 22-input 10-output AND-OR-logic array 25 ns 02 C22V10 22-input 10-output AND-OR-logic array 30 ns 03 C22V10 22-input 10-output AND-OR-logic array 40 ns 04 C22V10 22-input 10-output AND-OR-logic array 20 ns 05 C22V10 22-input 10-output AND-OR-logic array 15 ns 06 C22V10 22-input 10-output AND-OR-logic array 10 ns

The case outline(s) shall be as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style K GDFP2-F24, CDFP3-F24 24 Flat package 1/ L GDIP3-T24, CDIP4-T24 24 Dual-in-line package 1/ 3 CQCC1-N28 28 Square chip carrier package 1/ X GQCCl-J28 28 "J" lead chip carrier package 1/

The lead finish shall be as specified in MIL-M-38510. Finish letter "X" shall not be marked on the microcircuit or its packaging. The "X" designation is for use in specifications when lead finishes A, B, and C are considered acceptable and interchangeable without preference.

Supply voltage range . . . . . . . . . . . . . . . . . −0.5 V dc to +7.0 V dc Input voltage range . . . . . . . . . . . . . . . . . −2.0 V dc to +7.0 V dc 3/ Output voltage applied range . . . . . . . . . . . . . −0.5 V dc to +7.0 V dc 3/ Output sink current . . . . . . . . . . . . . . . . . 16 mA Thermal resistance, junction-to-case (ΘJC) . . . . . . See MIL-STD-1835 Maximum power dissipation (PD) 4/ . . . . . . . . . . 1.2 W Maximum junction temperature . . . . . . . . . . . . . +175°C Lead temperature (soldering, 10 seconds maximum) . . . +260°C

Supply voltage range (VCC) . . . . . . . . . . . . . . 4.5 V dc to 5.5 V dc High level input voltage (VIH) . . . . . . . . . . . . 2.0 V dc minimum Low level input voltage (VIL) . . . . . . . . . . . . 0.8 V dc maximum

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

October 13, 2017
MICROCIRCUIT, MEMORY, DIGITAL, CMOS UV ERASABLE, PROGRAMMABLE ARRAY LOGIC, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes
March 29, 2010
MICROCIRCUIT, MEMORY, DIGITAL, CMOS UV ERASABLE, PROGRAMMABLE ARRAY LOGIC, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
April 25, 2008
MICROCIRCUIT, MEMORY, DIGITAL, CMOS UV ERASABLE, PROGRAMMABLE ARRAY LOGIC, MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
January 4, 2002
MICROCIRCUIT, MEMORY, DIGITAL, CMOS UV ERASABLE, PROGRAMMABLE ARRAY LOGIC, MONOLITHIC SILICON
A description is not available for this item.
SMD-5962-87539 REV H
July 29, 1993
MICROCIRCUIT, MEMORY, DIGITAL, CMOS UV ERASABLE, PROGRAMMABLE ARRAY LOGIC, MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
June 17, 1993
MICROCIRCUIT, MEMORY, DIGITAL, CMOS UV ERASABLE, PROGRAMMABLE ARRAY LOGIC, MONOLITHIC SILICON
A description is not available for this item.
May 4, 1993
MICROCIRCUIT, MEMORY, DIGITAL, CMOS UV ERASABLE, PROGRAMMABLE ARRAY LOGIC, MONOLITHIC SILICON
A description is not available for this item.
February 2, 1993
MICROCIRCUIT, MEMORY, DIGITAL, CMOS UV ERASABLE, PROGRAMMABLE ARRAY LOGIC, MONOLITHIC SILICON
A description is not available for this item.
September 20, 1991
MICROCIRCUIT, MEMORY, DIGITAL, CMOS UV ERASABLE, PROGRAMMABLE ARRAY LOGIC, MONOLITHIC SILICON
A description is not available for this item.
June 25, 1990
MICROCIRCUIT, MEMORY, DIGITAL, CMOS UV ERASABLE, PROGRAMMABLE ARRAY LOGIC, MONOLITHIC SILICON
A description is not available for this item.
October 10, 1989
MICROCIRCUIT, MEMORY, DIGITAL, CMOS UV ERASABLE, PROGRAMMABLE ARRAY LOGIC, MONOLITHIC SILICON
A description is not available for this item.
October 5, 1988
MICROCIRCUIT, MEMORY, DIGITAL, CMOS UV ERASABLE, PROGRAMMABLE ARRAY LOGIC, MONOLITHIC SILICON
A description is not available for this item.
October 20, 1987
MICROCIRCUIT, MEMORY, DIGITAL, CMOS UV ERASABLE, PROGRAMMABLE ARRAY LOGIC, MONOLITHIC SILICON
A description is not available for this item.
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