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DOD - SMD 5962-87791

MICROCIRCUITS, DIGITAL, BIPOLAR, FIRST-IN FIRST-OUT (FIFO), MONOLITHIC SILICON

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Organization: DOD
Publication Date: 30 October 1989
Status: inactive
Page Count: 20
scope:

This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices".

The complete part number shall be as shown in the following example:

The device types shall identify the circuit function as Device type Generic number Circuit function as follows:

Device types Generic number Circuit function 01 57401 7 MHz 64×4 stand-alone first-in first-out memory 02 57402 7 MHz 64×5 stand-alone first-in first-out memory 03 57401A 10 MHz 64×4 stand-alone first-in first-out memory 04 57402A 10 MHz 64×5 stand-alone first-in first-out memory 05 C57401 7 MHz 64×4 cascadable first-in first-out memory 06 C57402 7 MHz 64×5 cascadable first-in first-out memory 07 C57401A 10 MHz 64×4 cascadable first-in first-out memory 08 C57402A 10 MHz 64×5 cascadable first-in first-out memory 09 57L401D 12 MHz 64×4 stand-alone first-in first-out memory 10 57L402D 12 MHz 64×5 stand-alone first-in first-out memory 11 57L4013D 12 MHz 64×4 stand-alone three-state first-in first-out memory

The case outlines shall be as designated in appendix C of MIL-M-38510, and as follows:

Outline letter Case outline E D-2 (16-lead, .840" × .310" × .200"), dual-in-line package V D-6 (18-lead, .960" × .310" × .200"), dual-in-line package 2 C-2 (20-lead, .358" × .358" × .100"), square chip carrier package

Supply voltage range - - - - - - - - - - - - - - - - −0.5 V dc to +7 V dc Input voltage range - - - - - - - - - - - - - - - - −1.5 V dc to +7 V dc Storage temperature range - - - - - - - - - - - - - −65°C to +150°C Lead temperature: Soldering, 5 seconds, E and V outline - - - - - - +300°C Soldering, 10 seconds, 2 outline - - - - - - - - - +260°C Thermal resistance, junction-to-case (θJC) 1/ - - - See MIL-M-38510, appendix C Output voltage applied range - - - - - - - - - - - - −0.5 V dc to +5.5 V dc Output sink current - - - - - - - - - - - - - - - - 100 mA

Maximum power dissipation (PD) 2/: Device types 01 and 05 - - - - - - - - - - - - - - - - 880 mW Device types 02, 03, 06, and 07 - - - - - - - - - - - - - 990 mW Device types 04 and 08 - - - - - - - - - - - - - - - - - 1.1 W Device types 09, 10, and 11 - - - - - - - - - - - - - - - 660 mW Maximum junction temperature (TJ) - - - - - - - - - - - - +175°C

Supply voltage range (VCC) - - - - - - - - - - - - - - - - 4.5 V to 5.5 V Case operating temperature range (TC) - - - - - - - - - - −55°C to +1250C Static low level input voltage (VIL1) - - - - - - - - - - 0.8 V maximum 3/ Static high level input voltage (VIH1) - - - - - - - - - - 2.0 V minimum 3/ AC low level input voltage (VIL2) - - - - - - - - - - - - 0 V maximum 3/ AC high level input voltage (VIH2) - - - - - - - - - - - - 3.0 V minimum 3/

Unless otherwise specified, the following specification, standard, and bulletin of the issue listed in that issue of the Department of Defense Index of Specifications and Standards specified in the solicitation, form a part of this drawing to the extent specified herein.

SPECIFICATION MILITARY MIL-M-38510 - Microcircuits, General Specification for. STANDARD MILITARY MIL-STD-883 - Test Methods and Procedures for Microelectronics. BULLETIN MILITARY MIL-BUL-103 - List of Standardized Military Drawing (SMD's).

(Copies of the specification, standard, and bulletin required by manufacturers in connection with specific acquisition functions should be obtained from the contracting activity or as directed by the contracting activity.)

In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing shall take precedence.

intended Use:

Microcircuits conforming to this drawing are intended for use when military specifications do not exist and qualified military devices that will perform the required function are not available for... View More

Document History

April 6, 2018
MICROCIRCUIT, MEMORY, DIGITAL, BIPOLAR, FIRST-IN FIRST-OUT (FIFO), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
May 11, 2012
MICROCIRCUIT, MEMORY, DIGITAL, BIPOLAR, FIRST-IN FIRST-OUT (FIFO), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
March 17, 2010
MICROCIRCUIT, MEMORY, DIGITAL, BIPOLAR, FIRST-IN FIRST-OUT (FIFO), MONOLITHIC SILICON
Microcircuits conforming to this drawing are intended for use for Government microcircuit applications (original equipment), design applications, and logistics purposes.
SMD 5962-87791
October 30, 1989
MICROCIRCUITS, DIGITAL, BIPOLAR, FIRST-IN FIRST-OUT (FIFO), MONOLITHIC SILICON
This drawing describes device requirements for class B microcircuits in accordance with 1.2.1 of MIL-STD-883, "Provisions for the use of MIL-STD-883 in conjunction with compliant non-JAN devices"....
November 16, 1988
MICROCIRCUITS, DIGITAL, BIPOLAR, FIRST-IN FIRST-OUT (FIFO), MONOLITHIC SILICON
A description is not available for this item.
December 17, 1987
MICROCIRCUITS, DIGITAL, BIPOLAR, FIRST-IN FIRST-OUT (FIFO), MONOLITHIC SILICON
A description is not available for this item.
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