This specification covers the detail requirements for wire ended high voltage silico diode rectifiers and is in accordance with K1007, Issue 3 except where otherwise stated.
THis specification covers the detail requirements for a Silicon P-gate reverse blocking triode thyristor for pulse applications and is in accordance with K1007 issue 3 except where otherwise stated
This specification covers the detail requirements for a Germanium mixer diode and is written in accordance with K1007, Issue 3, except where otherwise stated.
This specification covers the detail requirements for N-P-N Silicon Planar Transistor and is in accordance with K1007, Issue 3, except as otherwise stated.
