NPFC - MIL-S-19500/352
SEMICONDUCTOR DEVICE, DIODE, SILICON TYPE 1N831A
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| Organization: | NPFC |
| Publication Date: | 25 March 1966 |
| Status: | active |
| Page Count: | 9 |
scope:
This specification covers the detail requirements for a silicon, semiconductor diode for use as a mixer (first-detector stage) device in S-Band (see 4.3.1) equipment circuits.
See figure 1.
Operating temperature range: −65° to ± 100°C
Storage temperature range: −65° to ± 150°C
Operating altitude: up to 85,000 ft. (without derating)
Document History
May 5, 2017
Semiconductor Device, Diode, Silicon Type 1N831A
A description is not available for this item.
July 8, 2011
Semiconductor Device, Diode, Silicon Type 1N831A
A description is not available for this item.
March 24, 2004
SEMICONDUCTOR DEVICE, DIODE, SILICON TYPE 1N831A
A description is not available for this item.
June 7, 1999
SEMICONDUCTOR DEVICE, DIODE, SILICON TYPE 1N831A
A description is not available for this item.
September 30, 1988
SEMICONDUCTOR DEVICE, DIODE, SILICON TYPE 1N831A
A description is not available for this item.
September 10, 1971
SEMICONDUCTOR DEVICE, DIODE, SILICON TYPE 1N831A
A description is not available for this item.
MIL-S-19500/352
March 25, 1966
SEMICONDUCTOR DEVICE, DIODE, SILICON TYPE 1N831A
This specification covers the detail requirements for a silicon, semiconductor diode for use as a mixer (first-detector stage) device in S-Band (see 4.3.1) equipment circuits.
See figure 1....