NPFC - MIL-S-19500/295
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTORS, P-CHANNEL, SILICON, TYPE 2N2608, JAN AND UB
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| Organization: | NPFC |
| Publication Date: | 5 October 1992 |
| Status: | inactive |
| Page Count: | 11 |
scope:
This specification covers the detail requirements for P-Channel, junction, silicon field-effect transistors. One level of product assurance is provided for the device type as specified in MIL-S-19500.
See figure 1.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Electronics Supply Center, ATTN: DESC-ECT, 1507 Wilmington Pike, Dayton, OH 45444-5270 by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
Document History
February 5, 2020
TRANSISTOR, FIELD-EFFECT, P-CHANNEL, SILICON, THROUGH-HOLE AND SURFACE MOUNT PACKAGES, TYPE 2N2608, QUALITY LEVEL JAN
Scope.
This specification covers the performance requirements for P-channel, junction, silicon field-effect transistors. One level of product assurance (JAN) is provided for each device type as...
February 15, 2012
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTORS, P-CHANNEL, SILICON, TYPE 2N2608, JAN AND UB
This specification covers the performance requirements for P-channel, junction, silicon field-effect transistors. One level of product assurance is provided for each device type as specified in...
December 5, 2008
Semiconductor Device, Field-Effect Transistors, P-Channel, Silicon, Type 2N2608, JAN and UB
This specification covers the performance requirements for P-channel, junction, silicon field-effect transistors. One level of product assurance is provided for each device type as specified in...
March 1, 2004
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTORS, P-CHANNEL, SILICON, TYPE 2N2608, JAN AND UB
This specification covers the performance requirements for P-channel, junction, silicon field-effect transistors. One level of product assurance is provided for each device type as specified in...
March 14, 2003
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTORS, P-CHANNEL, SILICON, TYPE 2N2608, JAN AND UB
This specification covers the performance requirements for P-channel, junction, silicon field-effect transistors. One level of product assurance is provided for each device type as specified in...
September 19, 2001
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTORS, P-CHANNEL, SILICON, TYPE 2N2608, JAN AND UB
This specification covers the performance requirements for P-channel, junction, silicon field-effect transistors. One level of product assurance is provided for each device type as specified in...
June 25, 1999
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTORS, P-CHANNEL, SILICON, TYPE 2N2608, JAN AND UB
A description is not available for this item.
MIL-S-19500/295
October 5, 1992
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTORS, P-CHANNEL, SILICON, TYPE 2N2608, JAN AND UB
This specification covers the detail requirements for P-Channel, junction, silicon field-effect transistors. One level of product assurance is provided for the device type as specified in...
May 18, 1990
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTORS, P-CHANNEL, SILICON, TYPE 2N2608, JAN AND UB
A description is not available for this item.
May 21, 1970
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTORS, P-CHANNEL, SILICON, TYPE 2N2608, JAN AND UB
A description is not available for this item.
March 14, 1966
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTORS, P-CHANNEL, SILICON, TYPE 2N2608, JAN AND UB
A description is not available for this item.
December 10, 1964
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTORS, P-CHANNEL, SILICON, TYPE 2N2608, JAN AND UB
A description is not available for this item.
August 17, 1964
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTORS, P-CHANNEL, SILICON, TYPE 2N2608, JAN AND UB
A description is not available for this item.