DLA - MIL-S-19500/428B
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, N-CHANNEL SILICON, TYPE 2N4416A JANTX, JANTXV AND JANS
inactive
| Organization: | DLA |
| Publication Date: | 5 March 1993 |
| Status: | inactive |
| Page Count: | 15 |
scope:
This specification covers the detail requirements for N-Channel, junction, silicon field-effect transistors. Three level of product assurance is provided for the device type as specified in MIL-S-19500.
See figure 1.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Electronics Supply Center, ATTN: DESC-ECT, 1507 Wilmington Pike, Dayton, OH 45444-5270 by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.
Document History
March 16, 2021
Semiconductor Device, Field-Effect Transistor, N-Channel Silicon, Type 2N4416A and 2N4416AUB, JAN, JANTX, JANTXV, and JANS
A description is not available for this item.
March 16, 2021
Semiconductor Device, Field-Effect Transistor, N-Channel Silicon, Type 2N4416A and 2N4416AUB, JAN, JANTX, JANTXV, and JANS
A description is not available for this item.
May 24, 2016
Semiconductor Device, Field-Effect Transistor, N-Channel Silicon, Type 2N4416A and 2N4416AUB, JAN, JANTX, JANTXV, and JANS
A description is not available for this item.
August 8, 2011
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, N-CHANNEL SILICON, TYPE 2N4416A AND 2N4416AUB, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for N-channel, junction, silicon field-effect transistors. Three levels of product assurance are provided for the device type as specified in...
July 1, 2011
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, N-CHANNEL SILICON, TYPE 2N4416A AND 2N4416AUB, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for N-channel, junction, silicon field-effect transistors. Three levels of product assurance are provided for the device type as specified in...
May 16, 2006
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, N-CHANNEL SILICON, TYPE 2N4416A AND 2N4416AUB, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for N-channel, junction, silicon field-effect transistors. Three levels of product assurance are provided for the device type as specified in...
May 25, 2005
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, N-CHANNEL SILICON, TYPE 2N4416A AND 2N4416AUB, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for N-channel, junction, silicon field-effect transistors. Three levels of product assurance are provided for the device type as specified in...
March 18, 2003
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, N-CHANNEL SILICON, TYPE 2N4416A AND 2N4416AUB, JAN, JANTX, JANTXV, AND JANS
This specification covers the performance requirements for N-channel, junction, silicon field-effect transistors. Three levels of product assurance are provided for the device type as specified in...
August 16, 2001
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, N-CHANNEL SILICON, TYPE 2N4416A JAN, JANTX, JANTXV AND JANS
A description is not available for this item.
February 22, 2001
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, N-CHANNEL SILICON, TYPE 2N4416A JAN, JANTX, JANTXV AND JANS
A description is not available for this item.
August 30, 2000
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, N-CHANNEL SILICON, TYPE 2N4416A JAN, JANTX, JANTXV AND JANS
This specification covers the performance requirements for N-channel, junction, silicon field-effect transistors. Three levels of product assurance are provided for the device type as specified in...
July 2, 1999
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, N-CHANNEL SILICON, TYPE 2N4416A JAN, JANTX, JANTXV AND JANS
This specification covers the performance requirements for N-channel, junction, silicon field-effect transistors. Three levels of product assurance are provided for the device type as specified in...
MIL-S-19500/428B
March 5, 1993
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, N-CHANNEL SILICON, TYPE 2N4416A JANTX, JANTXV AND JANS
This specification covers the detail requirements for N-Channel, junction, silicon field-effect transistors. Three level of product assurance is provided for the device type as specified in...
December 7, 1987
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, N-CHANNEL SILICON, TYPE 2N4416A, JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
December 15, 1980
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, N-CHANNEL SILICON, TYPE 2N4416A AND TX2N4416A
A description is not available for this item.
April 16, 1973
SEMICONDUCTOR DEVICE, FIELD-EFFECT TRANSISTOR, N-CHANNEL SILICON, TYPE 2N4416A AND TX2N4416A
A description is not available for this item.
October 27, 1969
SEMICONDUCTOR, DEVICE, FIELD-EFFECT TRANSISTOR, N-CHANNEL , SILICON TYPE 2N4416A and TX2N4416A
A description is not available for this item.