DLA - SMD-5962-94760 REV A
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 17 April 2002 |
| Status: | inactive |
| Page Count: | 17 |
Document History
July 17, 2017
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are...
June 10, 2008
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
SMD-5962-94760 REV A
April 17, 2002
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
A description is not available for this item.
December 21, 1994
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, ELECTRICALLY ERASABLE PROGRAMMABLE LOGIC DEVICE, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...