DLA - SMD-5962-94707 REV A
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 9 PARALLEL SYNCHRONOUS FIFO, MONOLITHIC SILICON
inactive
| Organization: | DLA |
| Publication Date: | 5 June 2001 |
| Status: | inactive |
| Page Count: | 26 |
Document History
April 16, 2017
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 9 PARALLEL SYNCHRONOUS FIFO, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
June 15, 2009
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 9 PARALLEL SYNCHRONOUS FIFO, MONOLITHIC SILICON
This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes...
SMD-5962-94707 REV A
June 5, 2001
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 9 PARALLEL SYNCHRONOUS FIFO, MONOLITHIC SILICON
A description is not available for this item.
July 6, 1994
MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 9 PARALLEL SYNCHRONOUS FIFO, MONOLITHIC SILICON
This drawing forms a part of a one part - one part number documentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes Q and M) and...