DLA - MIL-S-19500/427E
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N5614, 1N5616, 1N5618, 1N5620, 1N5622, 1N5614UL, 1N5616UL, 1N5618UL, 1N5620UL, 1N5622UL, 1N5614US, 1N5616US, 1N5618US, 1N5620US, 1N5622US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
inactive
| Organization: | DLA |
| Publication Date: | 31 August 1994 |
| Status: | inactive |
| Page Count: | 17 |
scope:
This specification covers the detail requirements for silicon, power rectifier diodes. Four levels of product assurance are provided for each device as specified in MIL-S-19500. Two levels of product assurance are provided each unencapsulated device type.
See figures 1, 2, 3 (D-5A), 4, and 5 (JANHC and JANKC).
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: US Army Research Laboratory, ATTN: AMSRL-EP-RD, Fort Monmouth, NJ, 07703-5601 by using the Standardization Document Proposal (DD Form 1426) appearing at the end of this document or by letter.
Document History
June 21, 2022
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ENCAPSULATED (THROUGH-HOLE AND SURFACE MOUNT PACKAGES), AND UN-ENCAPSULATED, TYPES 1N5614, 1N5616, 1N5618, 1N5620, 1N5622, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
Scope.
This specification covers the performance requirements for silicon, hermetically sealed power rectifier diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided...
December 9, 2020
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N5614, 1N5616, 1N5618, 1N5620, 1N5622, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
Scope.
This specification covers the performance requirements for silicon, hermetically sealed power rectifier diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided...
October 18, 2018
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N5614, 1N5616, 1N5618, 1N5620, 1N5622, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, hermetically sealed power rectifier diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each...
March 9, 2018
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N5614, 1N5616, 1N5618, 1N5620, 1N5622, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, hermetically sealed power rectifier diodes. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each...
June 20, 2013
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N5614, 1N5616, 1N5618, 1N5620, 1N5622, 1N5614US, 1N5616US, 1N5618US, 1N5620US, 1N5622US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, hermetically sealed power rectifier diodes. Four levels of product assurance are provided for each encapsulated device as specified...
April 9, 2011
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N5614, 1N5616, 1N5618, 1N5620, 1N5622, 1N5614US, 1N5616US, 1N5618US, 1N5620US, 1N5622US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, hermetically sealed power rectifier diodes. Four levels of product assurance are provided for each encapsulated device as specified...
February 18, 2009
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, TYPES 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, 1N5615US, 1N5617US, 1N5619US, 1N5621US, 1N5623US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, hermetically sealed power rectifier diodes. Four levels of product assurance are provided for each encapsulated device as specified...
October 15, 2007
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N5614, 1N5616, 1N5618, 1N5620, 1N5622, 1N5614US, 1N5616US, 1N5618US, 1N5620US, 1N5622US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, hermetically sealed power rectifier diodes. Four levels of product assurance are provided for each encapsulated device as specified...
April 7, 2004
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N5614, 1N5616, 1N5618, 1N5620, 1N5622, 1N5614UL, 1N5616UL, 1N5618UL, 1N5620UL, 1N5622UL, 1N5614US, 1N5616US, 1N5618US, 1N5620US, 1N5622US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, hermetically sealed power rectifier diodes. Four levels of product assurance are provided for each encapsulated device as specified...
December 30, 2002
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N5614, 1N5616, 1N5618, 1N5620, 1N5622, 1N5614EG1, 1N5616EG1, 1N5618EG1, 1N5620EG1, 1N5622EG1, 1N5614UL, 1N5616UL, 1N5618UL, 1N5620UL, 1N5622UL, 1N5614US, 1N5616US, 1N5618US, 1N5620US, 1N5622US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, hermetically sealed power rectifier diodes. Four levels of product assurance are provided for each encapsulated device as specified...
September 7, 2001
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N5614, 1N5616, 1N5618, 1N5620, 1N5622, 1N5614EG1, 1N5616EG1, 1N5618EG1, 1N5620EG1, 1N5622EG1, 1N5614UL, 1N5616UL, 1N5618UL, 1N5620UL, 1N5622UL, 1N5614US, 1N5616US, 1N5618US, 1N5620US, 1N5622US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
October 24, 2000
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N5614, 1N5616, 1N5618, 1N5620, 1N5622, 1N5614EG1, 1N5616EG1, 1N5618EG1, 1N5620EG1, 1N5622EG1, 1N5614UL, 1N5616UL, 1N5618UL, 1N5620UL, 1N5622UL, 1N5614US, 1N5616US, 1N5618US, 1N5620US, 1N5622US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
A description is not available for this item.
July 8, 2000
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N5614, 1N5616, 1N5618, 1N5620, 1N5622, 1N5614EG1, 1N5616EG1, 1N5618EG1, 1N5620EG1, 1N5622EG1, 1N5614UL, 1N5616UL, 1N5618UL, 1N5620UL, 1N5622UL, 1N5614US, 1N5616US, 1N5618US, 1N5620US, 1N5622US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, hermetically sealed power rectifier diodes. Four levels of product assurance are provided for each encapsulated device as specified...
April 3, 2000
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N5614, 1N5616, 1N5618, 1N5620, 1N5622, 1N5614EG1, 1N5616EG1, 1N5618EG1, 1N5620EG1, 1N5622EG1, 1N5614UL, 1N5616UL, 1N5618UL, 1N5620UL, 1N5622UL, 1N5614US, 1N5616US, 1N5618US, 1N5620US, 1N5622US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, hermetically sealed power rectifier diodes. Four levels of product assurance are provided for each encapsulated device as specified...
January 15, 1998
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N5614, 1N5616, 1N5618, 1N5620, 1N5622, 1N5614UL, 1N5616UL, 1N5618UL, 1N5620UL, 1N5622UL, 1N5614US, 1N5616US, 1N5618US, 1N5620US, 1N5622US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the performance requirements for silicon, power rectifier diodes. Four levels of product assurance are provided for each encapsulated device as specified in MIL-PRF-19500....
MIL-S-19500/427E
August 31, 1994
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N5614, 1N5616, 1N5618, 1N5620, 1N5622, 1N5614UL, 1N5616UL, 1N5618UL, 1N5620UL, 1N5622UL, 1N5614US, 1N5616US, 1N5618US, 1N5620US, 1N5622US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification covers the detail requirements for silicon, power rectifier diodes. Four levels of product assurance are provided for each device as specified in MIL-S-19500. Two levels of product...
September 30, 1993
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N5614, 1N5616, 1N5618, 1N5620, 1N5622, 1N5614US, 1N5616US, 1N5618US, 1N5620US, 1N5622US, JAN, JANTX, JANTXV, JANS, JANC
This specification covers the detail requirements for silicon, power rectifier diodes. Five levels of product assurance are provided for each device as specified in MIL-S-19500.
See figures 1, 2...
December 8, 1990
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N5614, 1N5616, 1N5618, 1N5620, 1N5622, 1N5614US, 1N5616US, 1N5618U, 1N5620US, 1N5622US, JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
July 6, 1990
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N5614, 1N5616, 1N5618, 1N5620, 1N5622 JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
April 16, 1985
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, TYPES 1N5614, 1N5616, 1N5618, 1N5620, 1N5622 JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
June 20, 1984
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER TYPES 1N5614, 1N5616, 1N5618, 1N5620, 1N5622 JAN, JANTX, JANTXV, AND JANS
A description is not available for this item.
January 18, 1983
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER TYPES 1N5614, 1N5616, 1N5618, 1N5620, 1N5622 NON-TX, TX AND TXV
A description is not available for this item.
April 13, 1978
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER TYPES 1N5614, 1N5616, 1N5618, 1N5620, 1N5622 TX AND TXV
A description is not available for this item.
February 18, 1975
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER TYPES 1N5614, 1N5616, 1N5618, 1N5620, 1N5622 TX AND TXV
A description is not available for this item.
May 16, 1974
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER TYPES 1N5614, 1N5616, 1N5618, 1N5620, 1N5622 TX AND TXV
A description is not available for this item.